IDT61595L30DB datasheet, PDF - EEWORLD Datasheet

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IDT61595L30DB: DescriptionCache SRAM, 16KX4, CMOS, CDIP28, DIP-28; Categorystorage storage; File Size45KB，2 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT61595L30DB Overview

Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28

IDT61595L30DB Parametric

Parameter Name	Attribute value
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	CACHE SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	28
word count	16384 words
character code	16000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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IDT61595L30DB Related Products

	IDT61595L30DB	IDT61595S25P	IDT61595S25C	IDT61595L25P	IDT61595L30CB	IDT61595S25D	IDT61595L25D	IDT61595L25C	IDT61595S30CB	IDT61595S30DB
Description	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, PDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, PDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,
Contacts	28	28	28	28	28	28	28	28	28	28
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow
ECCN code	3A001.A.2.C	EAR99	EAR99	EAR99	3A001.A.2.C	EAR99	EAR99	EAR99	3A001.A.2.C	3A001.A.2.C
JESD-30 code	R-GDIP-T28	R-PDIP-T28	R-CDIP-T28	R-PDIP-T28	R-CDIP-T28	R-GDIP-T28	R-GDIP-T28	R-CDIP-T28	R-CDIP-T28	R-GDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bi	65536 bi
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	4	4	4	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28	28	28	28
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000	16000	16000	16000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	70 °C	70 °C	125 °C	70 °C	70 °C	70 °C	125 °C	125 °C
organize	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Package body material	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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