BDB02DRLRP datasheet, PDF - EEWORLD Datasheet

BDB02DRLRP: Description500mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BDB02DRLRP Overview

500mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	30 pF
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power consumption environment	2.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.7 V

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