BS107A18 datasheet, PDF - EEWORLD Datasheet

BS107A18: DescriptionSmall Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size59KB，3 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BS107A18 Overview

Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.25 A
Maximum drain-source on-resistance	6.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

	BS107A18	BS107-18	BS107A5
Description	Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	0.25 A	0.25 A	0.25 A
Maximum drain-source on-resistance	6.4 Ω	28 Ω	6.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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