OTP ROM, 8KX8, 55ns, CMOS, PQCC32,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Waferscale Integration Inc. |
| Reach Compliance Code | unknown |
| Maximum access time | 55 ns |
| I/O type | COMMON |
| JESD-30 code | R-PQCC-J32 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | OTP ROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 8KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QCCJ |
| Encapsulate equivalent code | LDCC32,.5X.6 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Programming voltage | 13.5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.0005 A |
| Maximum slew rate | 0.025 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| WS57C64F-55J | WS57C64F-70CMB | WS57C64F-70J | WS57C64F-55D | WS57C64F-70DI | WS57C64F-70D | WS57C64F-70DMB | |
|---|---|---|---|---|---|---|---|
| Description | OTP ROM, 8KX8, 55ns, CMOS, PQCC32, | UVPROM, 8KX8, 70ns, CMOS, CQCC32, | OTP ROM, 8KX8, 70ns, CMOS, PQCC32, | UVPROM, 8KX8, 55ns, CMOS, CDIP28, | UVPROM, 8KX8, 70ns, CMOS, CDIP28, | UVPROM, 8KX8, 70ns, CMOS, CDIP28, | UVPROM, 8KX8, 70ns, CMOS, CDIP28, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| Maximum access time | 55 ns | 70 ns | 70 ns | 55 ns | 70 ns | 70 ns | 70 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-PQCC-J32 | R-CQCC-N32 | R-PQCC-J32 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bi |
| Memory IC Type | OTP ROM | UVPROM | OTP ROM | UVPROM | UVPROM | UVPROM | UVPROM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 32 | 32 | 32 | 28 | 28 | 28 | 28 |
| word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 125 °C | 70 °C | 70 °C | 85 °C | 70 °C | 125 °C |
| organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | QCCJ | QCCN | QCCJ | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | LDCC32,.5X.6 | LCC32,.45X.55 | LDCC32,.5X.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Programming voltage | 13.5 V | 13.5 V | 13.5 V | 13.5 V | 13.5 V | 13.5 V | 13.5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A |
| Maximum slew rate | 0.025 mA | 0.092 mA | 0.082 mA | 0.098 mA | 0.092 mA | 0.082 mA | 0.092 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | YES | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | MILITARY | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND | NO LEAD | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | QUAD | QUAD | QUAD | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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