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MBR60100PT-G

Description
RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR
CategoryDiscrete semiconductor    diode   
File Size70KB,3 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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MBR60100PT-G Overview

RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR

MBR60100PT-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTO-3P, 3PIN
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current500 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current20000 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Schottky Barrier Rectifier
MBR6050PT-G Thru. MBR60100PT-G
Reverse Voltage: 50 to 100V
Forward Current: 60.0A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-Guardring for overvoltage protection.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
0.646(16.40)
0.626(15.90)
0.244(6.20)
0.224(5.70)
0.085(2.16)
0.075(1.90)
TO-3P
0.134(3.40)
0.114(2.90)
0.203(5.16)
0.193(4.90)
0.091(2.30)
0.078(1.97)
0.858(21.80)
0.819(20.80)
Mechanical Data
-Epoxy: UL 94-V0 rate flame retardant.
-Case: JEDEC TO-3P/TO-247AD, molded plastic body
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 5.6 grams
0.224(5.70)
0.205(5.20)
0.161(4.10)
0.138(3.50)
0.795(20.20)
0.776(19.70)
0.095(2.40)
0.083(2.10)
0.127(3.22)
0.117(2.97)
0.086(2.18)
0.076(1.93)
0.030(0.76)
0.020(0.51)
0.048(1.22)
0.044(1.12)
Dimensions in inches and (millimeter)
Maximum Ratings And Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@Tc=125°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
MBR6050
PT-G
50
35
50
MBR6060
PT-G
60
42
60
60
MBR60100
PT-G
80
56
80
Unit
V
V
V
A
Peak Forward Surage Current , 8.3ms Single
Half Sine-Wave Super Imposed On Rated
Load (JEDEC Method)
Maximum Instantaneous
Forward Voltage at
(Note 1)
Maximum DC Reverse
CurrentAt Rate DC
Blocking Voltage
I
F
=30A, T
C
=25°C
I
F
=30A, T
C
=125°C
@T
J
=25°C
@T
J
=100°C
I
FSM
V
F
V
F
I
R
I
R
R
θJC
T
J
T
STG
500
0.72
0.62
1.0
100
1.2
-65 to +150
-65 to +175
A
V
V
mA
mA
°C/W
°C
°C
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Notes:
1. Pulse Test: 300us pulse width,1% duty cycle.
2. Thermal resistance from junction to case per leg.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB054
REV: A
Page 1
Comchip Technology CO., LTD.

MBR60100PT-G Related Products

MBR60100PT-G MBR6060PT-G MBR6050PT-G
Description RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,60V V(RRM),TO-247VAR RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,80V V(RRM),TO-247VAR
Is it Rohs certified? conform to conform to conform to
package instruction TO-3P, 3PIN R-PSFM-T3 R-PSFM-T3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.75 V 0.75 V
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 500 A 500 A 500 A
Number of components 2 2 2
Phase 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 30 A 30 A 30 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 60 V 50 V
Maximum reverse current 20000 µA 20000 µA 20000 µA
surface mount NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker - Comchip Technology Comchip Technology

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