Schottky Barrier Rectifier
MBR6050PT-G Thru. MBR60100PT-G
Reverse Voltage: 50 to 100V
Forward Current: 60.0A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-Guardring for overvoltage protection.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
0.646(16.40)
0.626(15.90)
0.244(6.20)
0.224(5.70)
0.085(2.16)
0.075(1.90)
TO-3P
0.134(3.40)
0.114(2.90)
0.203(5.16)
0.193(4.90)
0.091(2.30)
0.078(1.97)
0.858(21.80)
0.819(20.80)
Mechanical Data
-Epoxy: UL 94-V0 rate flame retardant.
-Case: JEDEC TO-3P/TO-247AD, molded plastic body
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 5.6 grams
0.224(5.70)
0.205(5.20)
0.161(4.10)
0.138(3.50)
0.795(20.20)
0.776(19.70)
0.095(2.40)
0.083(2.10)
0.127(3.22)
0.117(2.97)
0.086(2.18)
0.076(1.93)
0.030(0.76)
0.020(0.51)
0.048(1.22)
0.044(1.12)
Dimensions in inches and (millimeter)
Maximum Ratings And Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@Tc=125°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
MBR6050
PT-G
50
35
50
MBR6060
PT-G
60
42
60
60
MBR60100
PT-G
80
56
80
Unit
V
V
V
A
Peak Forward Surage Current , 8.3ms Single
Half Sine-Wave Super Imposed On Rated
Load (JEDEC Method)
Maximum Instantaneous
Forward Voltage at
(Note 1)
Maximum DC Reverse
CurrentAt Rate DC
Blocking Voltage
I
F
=30A, T
C
=25°C
I
F
=30A, T
C
=125°C
@T
J
=25°C
@T
J
=100°C
I
FSM
V
F
V
F
I
R
I
R
R
θJC
T
J
T
STG
500
0.72
0.62
1.0
100
1.2
-65 to +150
-65 to +175
A
V
V
mA
mA
°C/W
°C
°C
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Notes:
1. Pulse Test: 300us pulse width,1% duty cycle.
2. Thermal resistance from junction to case per leg.
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Schottky Barrier Rectifier
Rating and Characteristics Curves (MBR6050PT-G Thru. MBR60100PT-G)
Fig.1- Forward Current Derating Curve
80
100
Fig.2- Typical Forward Characteristics
Instantaneous Forward Current, (A)
Average Forward Current, (A)
60
TJ=150°C
10
TJ=25°C
40
1.0
20
RESISTIVE OR
INDUCTIVE LOAD
Pulse width 300us
1% Duty cycle
0
0
25
50
75
100
125
150
175
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Case Temperature, (°C )
Instantaneous Forward Voltage, (V)
Fig.3- Maximum Non-Repetitive
Surge Current
700
600
500
400
300
200
100
0
Pulse width 8.3ms
Single half-sine-wave
(JEDEC Method)
Fig.4- Typical Rever Characteristics
100
Peak Forward Surge Current, (A)
Instantaneous Reverse Current, (mA)
800
10
TJ=100°C
1.0
TJ=75°C
0.1
0.01
TJ=25°C
0.001
1
10
100
0
20
40
60
80
100
120
140
Number of Cycles at 60Hz
Percent of Rated Peak Reverse Voltage, (%)
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Comchip Technology CO., LTD.
MCU
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