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2SB541R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size205KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB541R Overview

Transistor

2SB541R Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2SB541
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -120V(Min)
·High
Power Dissipation-
: P
C
= 100W(Max)@T
C
=25℃
·Complement
to Type 2SD388
APPLICATIONS
·Designed
for audio frequency power amplifier applications.
·Suitable
for output stage of 40~50 watts audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
-110
V
-100
V
-6
V
-8
A
-12
A
80
W
150
Collector Current-Continuous
I
CM
Collector Current-Pulse
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature
-65~150
isc Website:www.iscsemi.cn

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Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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