INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2SB541
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -120V(Min)
·High
Power Dissipation-
: P
C
= 100W(Max)@T
C
=25℃
·Complement
to Type 2SD388
APPLICATIONS
·Designed
for audio frequency power amplifier applications.
·Suitable
for output stage of 40~50 watts audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
Emitter-Base Voltage
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VALUE
UNIT
-110
V
-100
V
-6
V
-8
A
-12
A
80
W
℃
℃
150
Collector Current-Continuous
I
CM
Collector Current-Pulse
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature
-65~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB541
MAX
UNIT
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -1A
B
-2.0
V
V
BE
(sat)
I
CBO
Base-Emitter Saturation Voltage
I
C
= -5A; I
B
= -1A
B
-2.0
V
Collector Cutoff Current
V
CB
= -100V; I
E
= 0
-0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-0.1
mA
h
FE-1
DC Current Gain
I
C
= -1A; V
CE
= -5V
40
200
h
FE-2
DC Current Gain
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
h
FE-1
Classifications
S
40-80
R
60-120
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I
C
= -4A; V
CE
= -5V
20
I
E
= 0; V
CB
= -10V; f= 1MHz
I
C
= -0.2A; V
CE
= -10V
320
pF
7
MHz
100-200
isc Website：www.iscsemi.cn
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