PRELIMINARY DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA843TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5603, 2SC5600)
• Low voltage operation
Q1: Built-in high gain transistor
f
T
= 13.5 GHz,
S
21e
2
= 10.0 dB @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
f
T
= 5.0 GHz,
S
21e
2
= 4.0 dB @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
3-pin thin-type ultra super minimold part No.
2SC5603
Q2
2SC5600
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
µ
PA843TC
µ
PA843TC-T1
Remark
To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14679EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1999, 2000
µ
PA843TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Q1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
Q2
9
5.5
1.5
100
Unit
15
6
2
35
V
V
V
mA
mW
°C
°C
200 in 1 element
230 in 2 elements
150
−65
to +150
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
MIN.
−
−
60
12
8.5
−
−
TYP.
−
−
90
13.5
10
1.3
0.25
MAX.
200
200
120
−
−
2.5
0.5
Unit
nA
nA
−
GHz
dB
dB
pF
f
T
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
MIN.
−
−
100
3.5
5.5
3.5
4.5
−
−
TYP.
−
−
−
5.0
6.5
4.0
5.5
1.5
0.8
MAX.
600
600
160
−
−
−
−
2.5
1.0
Unit
nA
nA
−
GHz
GHz
dB
dB
dB
pF
f
T
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2 %
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
2
Preliminary Data Sheet P14679EJ2V0DS00
µ
PA843TC
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value of Q1
h
FE
Value of Q2
FB
2C
60 to 120
100 to 160
Preliminary Data Sheet P14679EJ2V0DS00
3
µ
PA843TC
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
°
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
Per Element
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
1.0
f = 1 MHz
Q2
300
250
230
200
150
100
50
Q1
0
25
50
75
100
125
150
0.1
0.1
1.0
10.0
100.0
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC Characteristics
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
V
CE
= 1 V
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current I
C
(mA)
30
Collector Current I
C
(mA)
40
30
20
20
10
10
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
I
B
= 460
µ
A
I
B
50
µ
A step
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
120
100
80
60
40
20
10
µ
A
0
2
4
6
8
I
B
50
µ
A step
I
B
= 560
µ
A
260
µ
A
Collector Current I
C
(mA)
30
20
10
10
µ
A
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
260
µ
A
Collector to Emitter Voltage V
CE
(V)
4
Preliminary Data Sheet P14679EJ2V0DS00
µ
PA843TC
DC Characteristics
Q1
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
DC Current Gain h
FE
DC Current Gain h
FE
100
100
10
10
1
0.1
1
10
100
1
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
f
T
Characteristics
Q1
Q2
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
12
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
f = 2 GHz
V
CE
= 1 V
Gain Bandwidth Product f
T
(GHz)
18
16
14
12
10
8
6
4
2
0
1
10
Collector Current I
C
(mA)
f = 2 GHz
V
CE
= 1 V
10
8
6
4
2
0
1
100
10
Collector Current I
C
(mA)
100
Gain Characteristics
Q1
Q2
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
20
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
12
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Availble Gain MAG. (dB)
Maximum Stable Gain MSG. (dB)
18
16
14
12
10
8
6
4
1
10
|S
21e
|
2
MSG.
MAG.
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Availble Gain MAG. (dB)
Maximum Stable Gain MSG. (dB)
f = 2 GHz
V
CE
= 1 V
10
8
6
4
2
0
1
f = 2 GHz
V
CE
= 1 V
MSG.
MAG.
|S
21e
|
2
100
10
Collector Current I
C
(mA)
100
Collector Current I
C
(mA)
Preliminary Data Sheet P14679EJ2V0DS00
5
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