PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL
TWIN TRANSISTOR
FEATURES
•
•
•
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
0.65
2.0
±
0.2
1.3
2
Q2
UPA838TF
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TS06
2.1
±
0.1
1.25
±
0.1
Q1
1
6
0.22
- 0.05
(All Leads)
+0.10
5
DESCRIPTION
The UPA838TF contains one NE688 and one NE687 NPN high
frequency silicon bipolar chip. NEC's new low profile TF
package is ideal for all portable wireless applications where
reducing component height is a prime consideration. Each
transistor chip is independently mounted and easily configured
for oscillator/buffer amplifier and other applications.
3
4
0.6
±
0.1
0.45
0 ~ 0.1
0.13
±
0.05
PIN CONNECTIONS
1. Collector (Q1)
4. Base (Q2)
2. Emitter (Q1)
5. Emitter (Q2)
3. Collector (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
f
T
Cre
|S
21E
|
2
|S
21E
|
2
NF
NF
I
CBO
I
EBO
h
FE
f
T
f
T
Cre
|S
21E
|
2
|S
21E
|
2
NF
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth (1) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth (2) at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain (1) at V
CE
= 1 V, I
C
=3 mA, f = 2 GHz
Insertion Power Gain (2) at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure (1) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Noise Figure (2) at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 2 V, I
C
= 20 mA
Gain Bandwidth (1) at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Gain Bandwidth (2) at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 2 V, I
E
= 0, f = 1 MHz
Insertion Power Gain (1) at V
CE
= 2 V, I
C
=20 mA, f = 2 GHz
Insertion Power Gain (2) at V
CE
= 1 V, I
C
=10 mA, f = 2 GHz
Noise Figure (1) at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
Noise Figure (2) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
GHz
GHz
pF
dB
dB
dB
dB
7
6
1.3
1.3
GHz
GHz
pF
dB
dB
dB
dB
µA
µA
70
9
7
11
9
0.4
8.5
7.5
2
2
2.5
UNITS
µA
µA
100
4.0
4.5
9.0
0.75
3.5
6.5
1.7
1.5
MIN
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
UPA838TF
TS06
TYP
MAX
0.1
0.1
145
Q1
0.85
2.5
0.1
0.1
140
Q2
0.8
Notes: 1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA838TF
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
Q1
9
6
2
100
Q2
5
3
2
30
ORDERING INFORMATION
PART NUMBER
UPA838TF-T1
QUANTITY
3000
PACKAGING
Tape & Reel
110
110
200
150
150
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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