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UZXMN10B08E6TA

Description
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size194KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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UZXMN10B08E6TA Overview

Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

UZXMN10B08E6TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSOT-23, 6 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance0.23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)9 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

UZXMN10B08E6TA Preview

ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.230
DESCRIPTION
I
D
= 1.9A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10B08E6TA
ZXMN10B08E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
10B8
Top View
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
LIMIT
100
20
1.9
1.5
1.6
9
2.5
9
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I DM
IS
I SM
PD
PD
T j :T stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
ZXMN10B08E6
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMN10B08E6
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
1.0
100
0.5
100
3.0
0.230
0.300
0.500
4.8
S
V
A
nA
V
I D =250 A, V GS =0V
V DS =100V, V GS =0V
V GS = 20V, V DS =0V
I =250 A, V DS = V GS
D
V GS =10V, I D =1.6A
V GS =4.5V, I D =1.4A
V GS =4.3V, I D =1.1A
V DS =15V,I D =1.6A
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.85
32.0
40.0
t d(on)
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
2.9
2.1
12.1
5.0
5.0
9.2
1.7
2.5
C iss
C oss
C rss
497
29
18
g fs
pF
pF
pF
V DS =50 V, V GS =0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V DS =50V,V GS =10V,
I
D
=1.6A
V DS =50V,V GS =5V,
I
D
=1.6A
V DD =50V, I D =1.0A
R G
≅6.0
, V GS =10V
0.95
V
ns
nC
T J =25°C, I S =2.0A,
V GS =0V
T J =25°C, I F =1.7A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
4
ZXMN10B08E6
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS

UZXMN10B08E6TA Related Products

UZXMN10B08E6TA UZXMN10B08E6TC
Description Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction SOT-23, 6 PIN SOT-23, 6 PIN
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 1.6 A 1.6 A
Maximum drain-source on-resistance 0.23 Ω 0.23 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 9 A 9 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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