Advance Technical Information
High Voltage
XPT
TM
IGBT
IXYA12N250CHV
IXYH12N250CHV
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
2500V
12A
4.50V
136ns
TO-263HV (IXYA)
G
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247HV)
TO-263HV
TO-247HV
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 150°C, R
G
= 10
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
2500
2500
±20
±30
28
12
80
I
CM
= 48
1500
310
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
6.0
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
C (Tab)
TO-247HV (IXYH)
G
E
C
G = Gate
E = Emitter
C (Tab)
C
= Collector
Tab = Collector
Features
High Voltage Packages
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 250A, V
CE
= V
GE
T
J
= 150C
V
CE
= 0V, V
GE
=
20V
I
C
= 12A, V
GE
= 15V, Note 1
T
J
= 150C
3.70
5.55
Characteristic Values
Min.
Typ.
Max.
2500
3.0
5.0
10
3
100
4.50
V
V
A
mA
nA
V
V
Applications
Low Gate Drive Requirement
High Power Density
V
CE
= V
CES
, V
GE
= 0V
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2017 IXYS CORPORATION, All Rights Reserved.
DS100836A(5/17)
IXYA12N250CHV
IXYH12N250CHV
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
7
12
7.5
1370
65
16
56
6
28
12
16
3.56
167
136
1.70
12
20
4.78
195
138
1.95
0.21
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.48 °C/W
°C/W
TO-247HV Outline
R
E
0P
Q S
D1
4
D2
1 2
D3
3
L1
A3
2X
A1
E2
E3
4X
A2
A
0P1
E1
1
2
L4
+
+
e2
D1
D
H
A1
3
E1
TO-263HV Outline
E
L1
C2
A
g
fs
R
Gi
I
C
= 12A, V
CE
= 10V, Note 1
Gate Input Resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
b2
e1
b
L3
GAUGE
PLANE
C
0º - 8º
I
C
= 12A, V
GE
= 15V, V
CE
= 0.5 • V
CES
A2
PIN: 1 - Gate
2 - Emitter
3 - Collector
Inductive load, T
J
= 25°C
I
C
= 12A, V
GE
= 15V
Note 2
V
CE
= 0.5 • V
CES
, R
G
= 10
Inductive load, T
J
= 150°C
I
C
= 12A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
TO-247HV
D
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
L
e
e1
c
b
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
3X
3X
b1
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYA12N250CHV
IXYH12N250CHV
Fig. 1. Output Characteristics @ T
J
= 25 C
24
V
GE
= 15V
12V
10V
9V
140
120
100
V
GE
= 15V
14V
13V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
20
8V
I
C
- Amperes
16
I
C
-
Amperes
12V
11V
10V
9V
8V
7V
6V
0
4
8
12
16
20
24
28
12
7V
8
80
60
40
4
6V
20
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
V
CE
- Volts
V
CE
- Volts
o
Fig. 3. Output Characteristics @ T
J
= 150 C
24
V
GE
= 15V
12V
10V
9V
2.4
2.2
8V
2.0
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
20
V
CE(sat)
- Normalized
16
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
C
- Amperes
I
C
= 24A
12
7V
I
C
= 12A
8
6V
4
5V
0
0
1
2
3
4
5
6
7
8
9
10
I
C
= 6A
-50
-25
0
25
50
75
100
125
150
175
V
CE
- Volts
T
J
- Degrees Centigrade
9
8
7
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
T
J
= 25 C
o
Fig. 6. Input Admittance
35
30
25
I
C
-
Amperes
V
CE
- Volts
6
5
I
C
= 24A
20
15
10
5
0
12A
4
3
2
5
6
7
8
9
10
11
12
13
14
15
T
J
= 150 C
25 C
- 40 C
o
o
o
6A
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
V
GE
- Volts
V
GE
- Volts
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYA12N250CHV
IXYH12N250CHV
Fig. 7. Transconductance
20
18
16
14
25 C
o
Fig. 8. Gate Charge
16
o
T
J
= - 40 C
14
12
10
8
6
4
V
CE
= 1250V
I
C
= 12A
I
G
= 10mA
g
f s
-
Siemens
10
8
6
4
2
0
0
5
10
15
20
25
150 C
o
V
GE
- Volts
30
35
12
2
0
0
10
20
30
40
50
60
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
Fig. 10. Reverse-Bias Safe Operating Area
50
f
= 1 MHz
C ies
Capacitance - PicoFarads
1,000
40
I
C
- Amperes
100
Coes
30
20
T
J
= 150 C
R
G
= 10
Ω
dv / dt < 10V / ns
o
10
C res
10
1
0
5
10
15
20
25
30
35
40
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
1
Z
(th)JC
- K / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA12N250CHV
IXYH12N250CHV
8
7
6
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
E
off
o
18
6
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
E
off
V
CE
= 1250V
E
on
T
J
= 150 C
o
12
E
on
I
C
= 24A
14
T
J
= 150 C , V
GE
= 15V
V
CE
= 1250V
5
R
G
= 10
Ω
V
GE
= 15V
10
E
off
- MilliJoules
E
off
- MilliJoules
5
4
3
2
1
0
10
20
30
40
50
60
70
80
I
C
= 12A
6
10
4
8
E
on
- MilliJoules
E
on
- MilliJoules
3
T
J
= 25 C
2
o
6
4
1
2
2
0
6
8
10
12
14
16
18
20
22
24
0
R
G
- Ohms
I
C
- Amperes
7
6
5
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
E
off
V
CE
= 1250V
E
on
I
C
= 24A
14
12
10
190
180
170
160
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
t
fi
o
600
550
500
450
t
d(off)
R
G
= 10
Ω
V
GE
= 15V
T
J
= 150 C, V
GE
= 15V
V
CE
= 1250V
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
E
off
- MilliJoules
E
on
- MilliJoules
4
3
2
I
C
= 12A
1
0
25
50
75
100
125
8
6
4
2
0
150
150
140
130
120
110
100
90
10
20
30
40
50
60
I
C
= 12A
I
C
= 24A
400
350
300
250
200
150
100
70
80
T
J
- Degrees Centigrade
R
G
- Ohms
240
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
t
fi
t
d(off)
240
240
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t
fi
t
d(off)
230
200
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
220
200
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
210
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
f i
- Nanoseconds
160
T
J
= 150 C
120
T
J
= 25 C
o
o
200
160
I
C
= 12A
190
180
120
I
C
= 24A
80
170
80
160
150
40
6
8
10
12
14
16
18
20
22
24
140
40
25
50
75
100
125
130
150
I
C
- Amperes
T
J
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved.
京公网安备 11010802033920号
EEWORLD
