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UPA2708GR-E1-A

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size130KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA2708GR-E1-A Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2708GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2708GR is N-channel MOS Field Effect
Transistor designed for DC/DC converter and power
management applications of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Power SOP8
Power SOP8
Power SOP8
µ
PA2708GR-E1
µ
PA2708GR-E2
Note
Note
FEATURES
Low on-state resistance
R
DS(on)1
= 5.5 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 7.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
Low C
iss
: C
iss
= 4700 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
µ
PA2708GR-E1-A
µ
PA2708GR-E2-A
Note
Pb-free (This product does not contain Pb in
external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±17
±68
1.1
2.5
150
−55
to +150
17
28.9
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation
Channel Temperature
Storage Temperature
Total Power Dissipation (PW =10 sec)
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Ambient
Note
Note
R
th(ch-A)
R
th(ch-L)
114
30
°C/W
°C/W
Channel to Drain Lead
Note
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17033EJ1V0DS00 (1st edition)
Date Published May 2005 CP(K)
Printed in Japan
2004

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