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UPA1919

Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size67KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1919 Overview

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1919
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1919 is a switching device, which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
6
5
4
1.5
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 58 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−3.0
A)
R
DS(on)2
= 60 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−3.0
A)
R
DS(on)3
= 84 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−3.0
A)
0 to 0.1
1
2
3
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
µ
PA1919TE
Marking: TX
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
−20
m12
m6.0
m24
0.2
2.0
150
−55
to +150
V
V
A
A
W
W
°C
°C
Gate
Protection
Diode
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Note2
Source
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2
2.
Mounted on FR-4 board of 2500 mm x 1.6 mm, t
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16298EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002

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Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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