CM75BU-12H
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Four IGBTMOD™
U-Series Module
75 Amperes/600 Volts
S - NUTS
(4 TYP)
TYP
K
K
R
T - (4 TYP.)
N
P
M
P
G
U
P E
U
P
G
V
P E
V
P
L
N
L
B
E
P
Q
L
G
U
N E
U
N
U
V
N
L
G
V
N E
V
N
TYP
J
D
A
TYP
V
R
W - THICK x X - WIDE
TAB (8 PLACES)
H
C
F
U
G
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
UPS
£
Welding Power Supplies
£
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75BU-12H is a
600V (V
CES
), 75 Ampere Four-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
75
V
CES
Volts (x 50)
12
P
G
U
P
E
U
P
U
G
V
P
E
V
P
V
G
V
N
E
V
N
G
U
N
E
U
N
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
2.83
3.58
2.17±0.01
2.91±0.01
0.16
1.02
0.31
0.79
0.39
0.43
Millimeters
72.0
91.0
55.0±0.25
74.0±0.25
4.0
26.0
8.1
20.0
10.0
11.0
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.74
0.75
0.57
1.55
0.05
M4
0.22 Dia.
1.61
0.69
0.02
0.110
Millimeters
18.7
19.1
14.4
39.3
1.25
M4
5.5 Dia.
41.0
17.5
0.5
2.79
1.16
+0.04/-0.02
29.5 +1.0/-0.5
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75BU-12H
Four IGBTMOD™ U-Series Module
75 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM75BU-12H
-40 to 150
-40 to 125
600
±20
75
150*
75
150*
310
15
31
390
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V, T
j
= 25°C
I
C
= 75A, V
GE
= 15V, T
j
= 125°C
V
CC
= 300V, I
C
= 75A, V
GE
= 15V
I
E
= 75A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.4
2.6
150
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 75A,
V
GE1
= V
GE2
= 15V,
R
G
= 8.3Ω, Resistive
Load Switching Operation
I
E
= 75A, di
E
/dt = -150A/μs
I
E
= 75A, di
E
/dt = -150A/μs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.18
Max.
6.6
3.6
1.0
100
250
200
300
160
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT 1/4 Module
Per FWDi 1/4 Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.025
Max.
0.4
0.9
–
Units
°C/W
°C/W
°C/W
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75BU-12H
Four IGBTMOD™ U-Series Module
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
150
COLLECTOR CURRENT, I
C
, (AMPERES)
120
V
GE
= 20V
12
160
120
80
40
0
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25
o
C
14
15
13
200
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
5
4
3
2
1
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
90
11
60
10
9
30
0
8
0
2
4
6
8
10
0
4
8
12
16
20
0
30
60
90
120
150
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
1
T
j
= 25°C
8
6
4
2
I
C
= 150A
C
ies
I
C
= 75A
10
2
10
0
C
oes
10
1
10
-1
V
GE
= 0V
f = 1MHz
C
res
I
C
= 30A
0
0
4
8
12
16
20
10
0
.06
1.0
1.4
1.8
2.2
2.6
3.0
10
-2
10
-1
10
0
10
1
10
2
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -150A/µsec
T
j
= 25°C
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 300V
V
GE
=
±15V
R
G
= 8.3
Ω
T
j
= 125°C
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
t
d(off)
t
f
I
C
= 75A
16
12
8
4
0
SWITCHING TIME, (ns)
V
CC
= 200V
10
2
t
d(on)
10
2
t
rr
10
1
V
CC
= 300V
10
1
t
r
I
rr
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
50
100
150
200
GATE CHARGE, Q
G
, (nC)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75BU-12H
Four IGBTMOD™ U-Series Module
75 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.4°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.9°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
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