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RD11FM

Description
Zener Diode, 11V V(Z), 5.45%, 1W, Silicon, Unidirectional, MINI MOLD PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size137KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

RD11FM Overview

Zener Diode, 11V V(Z), 5.45%, 1W, Silicon, Unidirectional, MINI MOLD PACKAGE-2

RD11FM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionMINI MOLD PACKAGE-2
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage11 V
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5.45%
Working test current5 mA
DATA SHEET
ZENER DIODES
RD2.0FM to RD120FM
ZENER DIODES
1 W PLANAR TYPE 2 PIN POWER MINI MOLD
DESCRIPTION
These products are zener diodes with an allowable power
dissipation of 1 W and a planar type 2 pin power mini mold
package.
PACKAGE DIMENSION
(Unit: mm)
4.7 ±0.3
4.3 ±0.1
<R>
FEATURES
area is reduced to about 65% compared with that of the 3-
pin power mini mold RD**P, which has been conventionally
used until now.
1.4 ±0.1
0 to 0.15
Suitable for high-density mounting because the mounting
1.3 ±0.2
1.55 ±0.1
while having the same Zener voltage classification as that
for RD**Ps.
APPLICATIONS
Zener voltage and constant-current circuit
Waveform clipper circuit and limiter circuit
Surge absorption circuit
Cathode
Indication
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Power dissipation
Forward current
Symbol
P
I
F
P
RSM
T
j
T
stg
Ratings
1.0
200
400
150
−55
to +150
Unit
W
mA
W
°C
°C
t = 10
μ
s
Remarks
Refer to Figure 1.
<R>
Surge reverse power
Junction temperature
Storage temperature
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D16083EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2.5 ±0.1
Achieves flat-surface mounting with a two-pin structure,
1.1 ±0.1 0.8 ±0.1
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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