Transistors with built-in Resistor
UNR521x Series
(UN521x Series)
Silicon NPN epitaxial planar type
Unit: mm
(0.425)
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5˚
1
2
(0.65) (0.65)
1.3
±0.1
■
Resistance by Part Number
•
UNR5210
•
UNR5211
•
UNR5212
•
UNR5213
•
UNR5214
•
UNR5215
•
UNR5216
•
UNR5217
•
UNR5218
•
UNR5219
•
UNR521D
•
UNR521E
•
UNR521F
•
UNR521K
•
UNR521L
•
UNR521M
•
UNR521N
•
UNR521T
•
UNR521V
•
UNR521Z
Marking symbol (R
1
)
(UN5210)
8L
47 kΩ
(UN5211)
8A
10 kΩ
(UN5212)
8B
22 kΩ
(UN5213)
8C
47 kΩ
(UN5214)
8D
10 kΩ
(UN5215)
8E
10 kΩ
(UN5216)
8F
4.7 kΩ
(UN5117)
8H
22 kΩ
(UN5218)
8I
0.51 kΩ
(UN5219)
8K
1 kΩ
(UN521D)
8M
47 kΩ
(UN521E)
8N
47 kΩ
(UN521F)
8O
4.7 kΩ
(UN521K)
8P
10 kΩ
(UN521L)
8Q
4.7 kΩ
(UN521M) EL
2.2 kΩ
(UN521N)
EX
4.7 kΩ
(UN521T)
EZ
22 kΩ
(UN521V)
FD
2.2 kΩ
(UN521Z)
FF
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
2.0
±0.2
0.9
±0.1
0.9
+0.2
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R
1
B
R
2
E
0 to 0.1
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00024CED
0.2
±0.1
1
UNR521x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR5210/5215/5216/5217
cutoff current UNR5213
(Collector
open)
UNR5212/5214/521D/
521E/521M/521N/521T
UNR521Z
UNR5211
UNR521F/521K
UNR5219
UNR5218/521L/521V
Forward
current
transfer
ratio
UNR521V
UNR5218/521K/521L
UNR5219/521D/521F
UNR5211
UNR5212/521E
UNR521Z
UNR5213/5214/521M
UNR521N/521T
UNR5210
*
/5215
*
/5216
*
/5217
*
Collector-emitter saturation voltage
UNR521V
Output voltage high-level
Output voltage low-level
UNR5213/521K
UNR521D
UNR521E
Transition frequency
Input
UNR5218
f
T
R
1
V
OH
V
OL
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
I
C
=
10 mA, I
B
=
1.5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6.0 V, R
L
=
1 kΩ
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
150
0.51
1.0
2.2
4.7
10
22
47
+30%
MHz
kΩ
4.9
0.2
V
V
h
FE
V
CE
=
10 V, I
C
=
5 mA
6
20
30
35
60
60
80
80
160
400
460
0.25
V
200
0.4
0.5
1.0
1.5
2.0
20
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
50
50
0.1
0.5
0.01
0.1
0.2
mA
Typ
Max
Unit
V
V
µA
resistance UNR5219
UNR521M/521V
UNR5216/521F/521L/521N
UNR521Z
UNR5211/5214/5215/521K
UNR5212/5217/521T
UNR5210/5213/521D/521E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
SJH00024CED
UNR521x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance UNR521M
ratio
UNR521N
UNR5218/5219
UNR521Z
UNR5214
UNR521T
UNR521F
UNR521V
UNR5211/5212/5213/521L
UNR521K
UNR521E
UNR521D
0.8
1.70
1.70
3.7
0.37
0.17
0.08
Symbol
R
1
/R
2
Conditions
Min
Typ
0.047
0.1
0.10
0.21
0.21
0.47
0.47
1.0
1.0
2.13
2.14
4.7
1.2
2.60
2.60
5.7
0.57
0.25
0.12
Max
Unit
Common characteristics chart
P
T
T
a
240
Total power dissipation P
T
(mW)
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR5210
I
C
V
CE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
h
FE
I
C
400
V
CE
=
10 V
60
I
C
/ I
B
=
10
10
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
300
T
a
=
75°C
25°C
200
−25°C
100
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
1
T
a
=
75°C
25°C
10
−1
−25°C
10
−2
10
−1
1
10
10
2
20
10
0
0
2
4
6
8
10
12
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00024CED
3
UNR521x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
10
2
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
3
10
1
2
10
10
−1
1
0
10
−1
1
10
10
2
1
0.4
10
−2
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5211
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
160
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
10
2
h
FE
I
C
400
V
CE
=
10 V
I
C
/ I
B
=
10
Collector current I
C
(mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Forward current transfer ratio h
FE
10
300
T
a
=
75°C
80
0.3 mA
1
25°C
10
−1
−25˚C
200
25°C
100
−25°C
0.2 mA
40
T
a
=
75°C
0.1 mA
0
0
2
4
6
8
10
12
10
−2
10
−1
1
10
10
2
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
4
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
10
2
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
10
−1
1
0
10
−1
10
10
2
1
0.4
0.6
0.8
1.0
1.2
1.4
10
−2
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00024CED
UNR521x Series
Characteristics charts of UNR5212
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
160
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
10
2
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
T
a
=
75°C
200
25°C
−25°C
25°C
10
−1
40
0.2 mA
100
−25°C
0.1 mA
0
0
2
4
6
8
10
12
10
−2
10
−1
1
10
10
2
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
10
2
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
10
−1
1
0
10
−1
1
10
10
2
1
0.4
0.6
0.8
1.0
1.2
1.4
10
−2
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5213
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
160
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
V
CE(sat)
I
C
10
2
h
FE
I
C
400
V
CE
=
10 V
I
C
/ I
B
=
10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
10
300
T
a
=
75°C
25°C
−25°C
1
200
40
0.2 mA
25°C
10
−1
−25°C
10
−2
10
−1
T
a
=
75°C
100
0.1 mA
0
0
2
4
6
8
10
12
1
10
10
2
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00024CED
5
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