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UN6224

Description
Silicon NPN epitaxial planer transistor
File Size58KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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UN6224 Overview

Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN6221/6222/6223/6224
Silicon NPN epitaxial planer transistor
For digital circuits
Unit: mm
0.15
s
Features
q
q
6.9±0.1
0.7
4.0
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
1.05 2.5±0.1
(1.45)
±0.05
0.8
0.65 max.
14.5±0.5
0.45
–0.05
+0.1
s
Resistance by Part Number
q
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
Internal Connection
R1
2.5±0.1
UN6221
UN6222
UN6223
UN6224
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
0.45
–0.05
2.5±0.5
1
2
2.5±0.5
3
+0.1
0.85
1.0
C
B
R2
E
3.5±0.1
0.8
1

UN6224 Related Products

UN6224 UN6223 UN6221 UN6222
Description Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor
Maker - Panasonic Panasonic Panasonic
package instruction - IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts - 3 3 3
Reach Compliance Code - unknow unknow unknow
ECCN code - EAR99 EAR99 EAR99
Other features - BUILT IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC) - 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage - 50 V 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 60 40 50
JESD-30 code - R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components - 1 1 1
Number of terminals - 3 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - IN-LINE IN-LINE IN-LINE
Polarity/channel type - NPN NPN NPN
Maximum power dissipation(Abs) - 0.6 W 0.6 W 0.6 W
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
Nominal transition frequency (fT) - 200 MHz 200 MHz 200 MHz
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