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UN6222

Description
Silicon NPN epitaxial planer transistor
CategoryDiscrete semiconductor    The transistor   
File Size58KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UN6222 Overview

Silicon NPN epitaxial planer transistor

UN6222 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistors with built-in Resistor
UN6221/6222/6223/6224
Silicon NPN epitaxial planer transistor
For digital circuits
Unit: mm
0.15
s
Features
q
q
6.9±0.1
0.7
4.0
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
1.05 2.5±0.1
(1.45)
±0.05
0.8
0.65 max.
14.5±0.5
0.45
–0.05
+0.1
s
Resistance by Part Number
q
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
Internal Connection
R1
2.5±0.1
UN6221
UN6222
UN6223
UN6224
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
0.45
–0.05
2.5±0.5
1
2
2.5±0.5
3
+0.1
0.85
1.0
C
B
R2
E
3.5±0.1
0.8
1

UN6222 Related Products

UN6222 UN6224 UN6223 UN6221
Description Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor
Maker Panasonic - Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 - IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 - 3 3
Reach Compliance Code unknow - unknow unknow
ECCN code EAR99 - EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO 1 - BUILT IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V - 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 - 60 40
JESD-30 code R-PSIP-T3 - R-PSIP-T3 R-PSIP-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE - IN-LINE IN-LINE
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 0.6 W - 0.6 W 0.6 W
Certification status Not Qualified - Not Qualified Not Qualified
surface mount NO - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 200 MHz - 200 MHz 200 MHz
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