Transistors with built-in Resistor
UN6221/6222/6223/6224
Silicon NPN epitaxial planer transistor
For digital circuits
Unit: mm
0.15
s
Features
q
q
6.9±0.1
0.7
4.0
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
1.05 2.5±0.1
(1.45)
±0.05
0.8
0.65 max.
14.5±0.5
0.45
–0.05
+0.1
s
Resistance by Part Number
q
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
Internal Connection
R1
2.5±0.1
UN6221
UN6222
UN6223
UN6224
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
0.45
–0.05
2.5±0.5
1
2
2.5±0.5
3
+0.1
0.85
1.0
C
B
R2
E
3.5±0.1
0.8
1
Transistors with built-in Resistor
UN6221/6222/6223/6224
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter
cutoff
current
UN6221
UN6222
UN6223/6224
(Ta=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CE
= 10V, I
C
= 100mA
I
C
= 100mA, IB = 5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 500Ω
V
CC
= 5V, V
B
= 3.5V, R
L
= 500Ω
V
CB
= 10V, I
E
= –50mA, f = 200MHz
(–30%)
200
2.2
4.7
10
R
1
/R
2
0.8
0.17
1.0
0.22
1.2
0.27
(+30%)
kΩ
4.9
0.2
50
50
40
50
60
0.25
V
V
V
MHz
min
typ
max
1
1
5
2
1
V
V
mA
Unit
µA
µA
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN6221
UN6222
UN6223/6224
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN6221/6224
UN6222
UN6223
Resistance ratio
UN6224
2
Transistors with built-in Resistor
Common characteristics chart
P
T
— Ta
800
UN6221/6222/6223/6224
Total power dissipation P
T
(mW)
700
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN6221
I
C
— V
CE
300
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
=10V
I
B
=1.0mA
250
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
1
3
10
30
100
300
1000
Collector current I
C
(mA)
0.9mA
200
0.8mA
0.7mA
150
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0
0
2
4
6
8
0.1mA
10
12
Forward current transfer ratio h
FE
300
Ta=75˚C
200
25˚C
100
–25˚C
–25˚C
0
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
24
10000
f=1MHz
I
E
=0
Ta=25˚C
3000
I
O
— V
IN
V
O
=5V
Ta=25˚C
V
IN
— I
O
100
30
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
20
Output current I
O
(
µA
)
16
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
12
8
4
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
3
Transistors with built-in Resistor
Characteristics charts of UN6222
I
C
— V
CE
300
100
UN6221/6222/6223/6224
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
200
V
CE
=10V
h
FE
— I
C
Forward current transfer ratio h
FE
30
10
3
1
0.3
0.1
0.03
0.01
–25˚C
Ta=75˚C
250
Ta=75˚C
150
25˚C
Collector current I
C
(mA)
I
B
=1.0mA
200
0.9mA
0.8mA
150
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
0
0
2
4
6
8
10
12
100
–25˚C
25˚C
50
0
1
3
10
30
100
300
1000
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
12
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
V
IN
— I
O
100
30
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
10
Output current I
O
(
µA
)
8
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
6
4
2
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN6223
I
C
— V
CE
240
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
h
FE
— I
C
200
V
CE
=10V
Ta=75˚C
25˚C
150
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
25˚C
200
160
I
B
=1.0mA
0.9mA
0.8mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
0.7mA
0.6mA
80
0.5mA
0.4mA
40
0.3mA
0.2mA
0.1mA
0
0
2
4
6
8
10
12
Ta=75˚C
100
–25˚C
50
0
1
3
10
30
100
300
1000
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
Transistors with built-in Resistor
C
ob
— V
CB
12
UN6221/6222/6223/6224
I
O
— V
IN
V
IN
— I
O
V
O
=5V
Ta=25˚C
100
30
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
10
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
Output current I
O
(
µA
)
8
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
6
4
2
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN6224
I
C
— V
CE
300
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
200
V
CE
=10V
h
FE
— I
C
250
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
Forward current transfer ratio h
FE
Ta=75˚C
150
Collector current I
C
(mA)
25˚C
200
I
B
=1.0mA
0.9mA
0.8mA
–25˚C
100
150
0.7mA
0.6mA
0.5mA
0.4mA
100
50
50
0.3mA
0.2mA
0.1mA
–25˚C
0
0
2
4
6
8
10
12
0
1
3
10
30
100
300
1000
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
12
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
1000
300
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
10
Output current I
O
(
µA
)
8
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
100
30
10
3
1
0.3
0.1
0.1
6
4
2
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V )
Input voltage V
IN
(V)
Output current I
O
(mA)
5
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