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UN2215

Description
Silicon NPN epitaxial planer transistor
CategoryDiscrete semiconductor    The transistor   
File Size219KB,17 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UN2215 Overview

Silicon NPN epitaxial planer transistor

UN2215 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15
2.8
–0.3
+0.2
Unit: mm
0.65±0.15
1.5
–0.05
+0.25
s
Features
0.95
q
2
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN2211
8A
10kΩ
UN2212
8B
22kΩ
UN2213
8C
47kΩ
UN2214
8D
10kΩ
UN2215
8E
10kΩ
UN2216
8F
4.7kΩ
UN2217
8H
22kΩ
UN2218
8I
0.51kΩ
UN2219
8K
1kΩ
UN2210
8L
47kΩ
UN221D
8M
47kΩ
UN221E
8N
47kΩ
UN221F
8O
4.7kΩ
UN221K
8P
10kΩ
UN221L
8Q
4.7kΩ
UN221M
EL
2.2kΩ
UN221N
EX
4.7kΩ
UN221T
EZ
22kΩ
UN221V
FD
2.2kΩ
UN221Z
FF
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
1.1
–0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.16
–0.06
+0.2
+0.1
s
Resistance by Part Number
0.4
–0.05
+0.1
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
1.45
1
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