EEWORLDEEWORLDEEWORLD

Part Number

Search

MBR2520CT

Description
30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size816KB,2 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet Compare View All

MBR2520CT Overview

30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MBR2520CT
THRU
MBR2560CT
25 Amp
Schottky
Features
Meatl of Silicon Rectifier, Majority Conducton
Guard ring for transient protection
High surge capacity
High Current Capability, High Efficiency
Low Power Loss
Barrier Rectifier
20 to 100 Volts
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
MCC
Catalog
Number
MBR2520CT
MBR2530CT
MBR2535CT
MBR2540CT
MBR2545CT
MBR2560CT
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
Maximum
RMS
Voltage
14V
21V
24.5V
28V
31.5V
42V
Maximum
DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
TO-220AB
B
C
K
PIN
1
2
3
L
M
D
A
E
F
G
I
J
N
H H
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
2520CT-2540CT
2545CT-2560CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
2520CT-2540CT
2545CT-2560CT
Typical Junction
Capacitance
I
F(AV)
I
FSM
30 A
150A
T
A
= 130°C
8.3ms, half sine


A
B
C
D
E
F
G
H
I
J
K
L
M
N
PIN 1
PIN 3
PIN 2
CASE

MM

14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
 
V
F
.82V
.75V
I
FM
= 30A;
I
FM
= 15A
T
A
= 25°C
I
R
0.2mA
1mA
C
J
450pF
T
A
= 25°C
Measured at
1.0MHz, V
R
=4.0V
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
www.kersemi.com

MBR2520CT Related Products

MBR2520CT MBR2540CT MBR2530CT
Description 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
What parameters should be paid attention to when selecting optocouplers?
What parameters should be paid attention to when selecting optocouplers?...
QWE4562009 Discrete Device
Is there any difference between bit rate and airspeed?
What is the role of bit rate in wireless communication? Is there any difference between bit rate and airspeed?...
迷途少年 Wireless Connectivity
Understand EMI in power circuits and the role of components
[color=black] When the power supply is working, the switching transistor will generate a lot of EMI and RFI, which will seriously affect the normal operation of other electronic equipment in the house...
qwqwqw2088 Analogue and Mixed Signal
Signal generation problem solving
I want to split the signal from IC into two signals with a difference of 180 degrees . The test process I am doing now is that the signal goes through 37325 and then enters 4013. Finally, the original...
david12353 Power technology
Implementation of HART Modem in Intelligent Current Transmitter
[b]Introduction[/b] Advanced intelligent transmitters are the need for the development of industrial process control technology and are also necessary for the realization of high-precision control of ...
咖啡不加糖 Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1967  807  2619  1029  2326  40  17  53  21  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号