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MBR2540CT

Description
30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size816KB,2 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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MBR2540CT Overview

30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

  omponents
21201 Itasca Street Chatsworth

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MBR2520CT
THRU
MBR2560CT
25 Amp
Schottky
Features
Meatl of Silicon Rectifier, Majority Conducton
Guard ring for transient protection
High surge capacity
High Current Capability, High Efficiency
Low Power Loss
Barrier Rectifier
20 to 100 Volts
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
MCC
Catalog
Number
MBR2520CT
MBR2530CT
MBR2535CT
MBR2540CT
MBR2545CT
MBR2560CT
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
Maximum
RMS
Voltage
14V
21V
24.5V
28V
31.5V
42V
Maximum
DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
TO-220AB
B
C
K
PIN
1
2
3
L
M
D
A
E
F
G
I
J
N
H H
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
2520CT-2540CT
2545CT-2560CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
2520CT-2540CT
2545CT-2560CT
Typical Junction
Capacitance
I
F(AV)
I
FSM
30 A
150A
T
A
= 130°C
8.3ms, half sine


A
B
C
D
E
F
G
H
I
J
K
L
M
N
PIN 1
PIN 3
PIN 2
CASE

MM

14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
 
V
F
.82V
.75V
I
FM
= 30A;
I
FM
= 15A
T
A
= 25°C
I
R
0.2mA
1mA
C
J
450pF
T
A
= 25°C
Measured at
1.0MHz, V
R
=4.0V
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
www.kersemi.com

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MBR2540CT MBR2520CT MBR2530CT
Description 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
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