LF
PSMN059-150Y
3 October 2013
PA
K
56
N-channel TrenchMOS SiliconMAX standard level FET
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
•
•
Higher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
3. Applications
•
•
•
•
Class D amplifier
DC-to-DC converters
Motion control
Switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1; Fig. 3
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 12 A; T
j
= 25 °C;
Fig. 9; Fig. 10
V
GS
= 10 V; I
D
= 12 A; V
DS
= 75 V;
Fig. 11; Fig. 12
-
9.1
-
nC
Min
-
-
-
Typ
-
-
-
Max
150
43
113
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
46
59
mΩ
Dynamic characteristics
Q
GD
gate-drain charge
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NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Package
Name
PSMN059-150Y
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
Type number
7. Marking
Table 4.
Marking codes
Marking code
059150
Type number
PSMN059-150Y
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1; Fig. 3
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 1
I
DM
P
tot
T
stg
PSMN059-150Y
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
T
j
≥ 25 °C; T
j
≤ 150 °C; R
GS
= 20 Ω
Min
-
-
-20
-
-
-
-
-55
Max
150
150
20
43
27.7
129
113
150
Unit
V
V
V
A
A
A
W
°C
peak drain current
total power dissipation
storage temperature
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
T
mb
= 25 °C;
Fig. 2
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© NXP N.V. 2013. All rights reserved
Product data sheet
3 October 2013
2 / 12
NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
T
j
I
S
I
SM
E
DS(AL)S
Parameter
junction temperature
Conditions
Min
-55
Max
150
Unit
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 12.1 A;
V
sup
≤ 150 V; unclamped; t
p
= 0.21 ms;
R
GS
= 50 Ω
120
I
der
(%)
80
003aac023
-
-
52
208
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
-
255
mJ
120
P
der
(%)
80
003aab937
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of solder point temperature
PSMN059-150Y
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© NXP N.V. 2013. All rights reserved
Product data sheet
3 October 2013
3 / 12
NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
10
3
I
D
(A)
10
2
t
p
= 10 µs
10
100 µs
1 ms
DC
1
10 ms
100 ms
Limit R
DSon
= V
DS
/ I
D
003aab749
10
- 1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
mounted on a printed-circuit board;
vertical in still air;
Fig. 4
Min
-
Typ
-
Max
1.1
Unit
K/W
10
Z
th(j-mb)
(K/W)
1
d = 0.5
0.2
10
- 1
0.1
0.05
0.02
10
- 2
single shot
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
P
003aac268
δ=
t
p
T
t
T
t
p
(s)
1
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN059-150Y
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© NXP N.V. 2013. All rights reserved
Product data sheet
3 October 2013
4 / 12
NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 7; Fig. 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
Fig. 7; Fig. 8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 7; Fig. 8
I
DSS
drain leakage current
V
DS
= 120 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 120 V; V
GS
= 0 V; T
j
= 150 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 12 A; T
j
= 25 °C;
Fig. 9; Fig. 10
V
GS
= 10 V; I
D
= 12 A; T
j
= 150 °C;
Fig. 9; Fig. 10
R
G
Q
G(tot)
Q
GS
Q
GD
V
GS(pl)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
PSMN059-150Y
Min
150
133
2
1
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
-
-
-
46
101
1.1
Max
-
-
4
-
4.4
1
100
100
100
59
135
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Ω
Static characteristics
V
GS(th)
gate resistance
f = 1 MHz
Dynamic characteristics
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 75 V; R
L
= 3 Ω; V
GS
= 10 V;
R
G(ext)
= 5.6 Ω
I
D
= 12 A; V
DS
= 75 V;
Fig. 11; Fig. 12
V
DS
= 30 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 13
I
D
= 12 A; V
DS
= 75 V; V
GS
= 10 V;
Fig. 11; Fig. 12
-
-
-
-
-
-
-
-
-
-
-
27.9
6.3
9.1
4.8
1529
208
66
14.2
42
54.2
11.1
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
Source-drain diode
source-drain voltage
I
S
= 12 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 14
All information provided in this document is subject to legal disclaimers.
-
0.9
1.2
V
© NXP N.V. 2013. All rights reserved
Product data sheet
3 October 2013
5 / 12
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