PESD5V0X1BCSF
16 June 2015
Ultra low capacitance bidirectional ESD protection diode
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode a
DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package.
2. Features and benefits
•
•
•
•
Bidirectional ESD protection of one line
Low diode capacitance C
d
= 1.1 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
•
•
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
C
d
V
RWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
T
amb
= 25 °C
Min
-
-
Typ
-
-
Max
1.1
5
Unit
pF
V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1
K2
cathode (diode 1)
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
sym045
2
Transparent
top view
DSN0603-2 (SOD962-2)
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PESD5V0X1BCSF
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0X1BCSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
Type number
7. Marking
Table 4.
Marking codes
Marking code
P
Type number
PESD5V0X1BCSF
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20 µs
[1]
Min
-
-
-40
-65
Max
7
150
125
150
Unit
A
°C
°C
°C
ESD maximum ratings
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1]
[2]
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
[2]
[2]
-
-
20
20
kV
kV
PESD5V0X1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 June 2015
2 / 11
NXP Semiconductors
PESD5V0X1BCSF
Ultra low capacitance bidirectional ESD protection diode
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
- t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Symbol
V
RWM
I
RM
C
d
V
BR
V
CL
V
CL
Characteristics
Parameter
reverse standoff
voltage
reverse leakage
current
diode capacitance
breakdown voltage
clamping voltage
clamping voltage
Conditions
T
amb
= 25 °C
V
RWM
= 5 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
R
= 1 mA; T
amb
= 25 °C
T
amb
= 25 °C; I
PPM
= 7 A; t
p
= 8/20 μs
T
amb
= 25 °C; I
PP
= 8 A; t
p
= TLP
T
amb
= 25 °C; I
PP
= 16 A; t
p
= TLP
R
dyn
dynamic resistance
[1]
[2]
[1]
[2]
[2]
[2]
Min
-
-
-
6
-
-
-
-
Typ
-
1
-
10
-
4.6
6.5
0.25
Max
5
50
1.1
-
5.5
-
-
-
Unit
V
nA
pF
V
V
V
V
Ω
T
amb
= 25 °C; I
R
= 10 A
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
PESD5V0X1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 June 2015
3 / 11
NXP Semiconductors
PESD5V0X1BCSF
Ultra low capacitance bidirectional ESD protection diode
I
PPM
I
PP
16
I
PP
(A)
12
aaa-018661
R
dyn
= 0.25 Ω
-V
CL
-V
BR
-V
RWM
I
R
I
RM
8
-I
RM
-I
R
V
RWM
V
BR
V
CL
4
-
+
-I
PP
-I
PPM
006aab325
0
0
5
10
15
V
CL
(V)
20
Fig. 3.
V-I characteristics for a bidirectional ESD
protection diode
0
I
PP
(A)
-4
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 4.
Dynamic resistance with positive clamping
voltage
aaa-018662
-8
-12
R
dyn
= 0.25 Ω
-16
-20
-15
-10
-5
0
V
CL
(V)
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 5.
Dynamic resistance with negative clamping voltage
PESD5V0X1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 June 2015
4 / 11
NXP Semiconductors
PESD5V0X1BCSF
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
Cs
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
IEC 61000-4-2 ed.2
C
s
= 150 pF; R
d
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
10
V
(kV) 8
6
4
2
V
(kV) 0
-2
-4
2
-6
0
-2
-10
-8
-10
-10
0
10
20
30
40
50
t (ns)
60
70
0
10
20
30
40
50
t (ns)
60
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 6.
ESD clamping test setup and waveforms
aaa-016866
V
CL
(V)
100
80
60
40
20
0
-20
-10
V
CL
at 30 ns = 4.6 V
120
V
CL
(V)
20
0
V
CL
at 30 ns = -3.8 V
aaa-016867
-20
-40
-60
-80
-100
-120
-10
0
10
20
30
40
50
60
t (ns)
70
0
10
20
30
40
50
60
t (ns)
70
Fig. 7.
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
Fig. 8.
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
PESD5V0X1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 June 2015
5 / 11
京公网安备 11010802033920号
EEWORLD
