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PSMN8R5-60YS_15

Description
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
File Size247KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PSMN8R5-60YS_15 Overview

N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

PSMN8R5-60YS
22 July 2015
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Product data sheet
1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
3. Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 2
T
mb
= 25 °C;
Fig. 1
Min
-
-
-
-55
Typ
-
-
-
-
Max
60
76
106
175
Unit
V
A
W
°C
Static characteristics
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 13
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 60 A; V
DS
= 30 V;
Fig. 15; Fig. 14
-
7.7
-
nC
-
5.6
8
-
-
12.8
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