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SDF9NA80JABXHU1B

Description
Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size67KB,1 Pages
ManufacturerSolitron Devices Inc.
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SDF9NA80JABXHU1B Overview

Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN

SDF9NA80JABXHU1B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSolitron Devices Inc.
Parts packaging codeTO-254Z
package instructionFLANGE MOUNT, S-MSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresCUSTOM BENT LEAD OPTIONS ARE AVAILABLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance1.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-MSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment240 W
Maximum pulsed drain current (IDM)36 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)142 ns
Maximum opening time (tons)63 ns
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