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2N6517ZL1

Description
TRANSISTOR 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size96KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N6517ZL1 Overview

TRANSISTOR 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal

2N6517ZL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-04
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Maximum off time (toff)3.5 ns
Maximum opening time (tons)200 ns
Base Number Matches1
ON Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
Base Current
Collector Current –
Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage
Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
6.0
5.0
I
B
I
C
P
D
250
500
625
5.0
1.5
12
–55 to +150
mAdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
2N6515
250
250
2N6517
2N6520
350
350
Unit
Vdc
Vdc
Vdc
NPN
2N6515
2N6517
PNP
2N6520
Voltage and current are negative
for PNP transistors
1
2
3
P
D
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
T
J
, T
stg
COLLECTOR
3
2
BASE
NPN
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
COLLECTOR
3
2
BASE
PNP
1
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
1. Pulse Test: Pulse Width
300
ms,
Duty Cycle
2.0%.
©
Semiconductor Components Industries, LLC, 2001
V
(BR)CEO
2N6515
2N6517, 2N6520
V
(BR)CBO
2N6515
2N6517, 2N6520
V
(BR)EBO
2N6515, 2N6517
2N6520
6.0
5.0
250
350
250
350
Vdc
Vdc
Vdc
97
October, 2001 – Rev. 3
Publication Order Number:
2N6515/D

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Description TRANSISTOR 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal 500mA, 350V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN 500mA, 350V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN TRANSISTOR 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal 500mA, 350V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3
Manufacturer packaging code CASE 29-04 CASE 29-04 CASE 29-04 CASE 29-04 CASE 29-04
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 350 V 350 V 350 V 350 V 350 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15 15
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225 225 225 225
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz
Maximum off time (toff) 3.5 ns 3.5 ns 3.5 ns 3.5 ns 3.5 ns
Maximum opening time (tons) 200 ns 200 ns 200 ns 200 ns 200 ns
Base Number Matches 1 1 1 1 1
Other features EUROPEAN PART NUMBER - - EUROPEAN PART NUMBER EUROPEAN PART NUMBER
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