ON Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
Base Current
Collector Current –
Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage
Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
6.0
5.0
I
B
I
C
P
D
250
500
625
5.0
1.5
12
–55 to +150
mAdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
2N6515
250
250
2N6517
2N6520
350
350
Unit
Vdc
Vdc
Vdc
NPN
2N6515
2N6517
PNP
2N6520
Voltage and current are negative
for PNP transistors
1
2
3
P
D
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
T
J
, T
stg
COLLECTOR
3
2
BASE
NPN
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
COLLECTOR
3
2
BASE
PNP
1
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
©
Semiconductor Components Industries, LLC, 2001
V
(BR)CEO
2N6515
2N6517, 2N6520
V
(BR)CBO
2N6515
2N6517, 2N6520
V
(BR)EBO
2N6515, 2N6517
2N6520
6.0
5.0
–
–
250
350
–
–
250
350
–
–
Vdc
Vdc
Vdc
97
October, 2001 – Rev. 3
Publication Order Number:
2N6515/D
NPN 2N6515 2N6517 PNP 2N6520
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(Continued)
Collector Cutoff Current
(V
CB
= 150 Vdc, I
E
= 0)
(V
CB
= 250 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
I
CBO
2N6515
2N6517, 2N6520
I
EBO
2N6515, 2N6517
2N6520
–
–
50
50
–
–
50
50
nAdc
nAdc
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
h
FE
2N6515
2N6517, 2N6520
2N6515
2N6517, 2N6520
2N6515
2N6517, 2N6520
2N6515
2N6517, 2N6520
2N6515
2N6517, 2N6520
V
CE(sat)
–
–
–
–
V
BE(sat)
–
–
–
V
BE(on)
–
0.75
0.85
0.90
2.0
Vdc
0.30
0.35
0.50
1.0
Vdc
35
20
50
30
50
30
45
20
25
15
–
–
–
–
300
200
220
200
–
–
Vdc
–
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
(I
C
= 30 mAdc, I
B
= 3.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
(I
C
= 30 mAdc, I
B
= 3.0 mAdc)
Base–Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(1)
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 20 MHz)
Collector–Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
Emitter–Base Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
2N6515, 2N6517
2N6520
f
T
C
cb
C
eb
–
–
80
100
40
–
200
6.0
MHz
pF
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V
CC
= 100 Vdc, V
BE(off)
= 2.0 Vdc, I
C
= 50 mAdc, I
B1
= 10 mAdc)
Turn–Off Time
(V
CC
= 100 Vdc, I
C
= 50 mAdc, I
B1
= I
B2
= 10 mAdc)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
t
on
t
off
–
–
200
3.5
µs
µs
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98
NPN 2N6515 2N6517 PNP 2N6520
200
V
CE
= 10 V
T
J
= 125°C
hFE , DC CURRENT GAIN
100
70
50
25°C
-55°C
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70 100
Figure 1. DC Current Gain – NPN 2N6515
200
V
CE
= 10 V
T
J
= 125°C
hFE , DC CURRENT GAIN
200
V
CE
= -10 V
100
70
50
30
20
T
J
= 125°C
25°C
-55°C
hFE , DC CURRENT GAIN
100
70
50
30
20
25°C
-55°C
10
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50 70 100
10
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
I
C
, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 2. DC Current Gain – NPN 2N6517
Figure 3. DC Current Gain – PNP 2N6520
BANDWIDTH PRODUCT (MHz)
100
70
50
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
BANDWIDTH PRODUCT (MHz)
100
70
50
T
J
= 25°C
V
CE
= -20 V
f = 20 MHz
30
20
30
20
f T, CURRENT-GAIN
10
1.0
f T, CURRENT-GAIN
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50 70
100
10
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
I
C
, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 4. Current–Gain – Bandwidth Product – NPN
2N6515, 2N6517
Figure 5. Current–Gain – Bandwidth Product – PNP
2N6520
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99
NPN 2N6515 2N6517 PNP 2N6520
NPN
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
1.0
2.0
T
J
= 25°C
-1.4
-1.2
V, VOLTAGE (VOLTS)
-1.0
-0.8
-0.6
-0.4
-0.2
V
CE(sat)
@ I
C
/I
B
= 5.0
50
70 100
0
-1.0
V
CE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 5.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
I
C
, COLLECTOR CURRENT (mA)
-50 -70 -100
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
Figure 6. “On” Voltages – NPN 2N6515, 2N6517
Figure 7. “On” Voltages – PNP 2N6520
R
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
2.0
1.5
1.0
0.5
0
IC
+
10
IB
25°C to 125°C
R
θVC
for V
CE(sat)
-55°C to 25°C
-55°C to 125°C
R
θVB
for V
BE
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
R
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
2.5
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-1.0
IC
+
10
IB
25°C to 125°C
R
θVB
for V
BE
-55°C to 25°C
-0.5
-1.0
-1.5
-2.0
-2.5
1.0
R
θVC
for V
CE(sat)
-55°C to 125°C
-50 -70 -100
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Temperature Coefficients – NPN 2N6515,
2N6517
Figure 9. Temperature Coefficients – PNP 2N6520
100
70
50
C, CAPACITANCE (pF)
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.5
T
J
= 25°C
C
eb
C, CAPACITANCE (pF)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
C
eb
T
J
= 25°C
C
cb
C
cb
1.0 2.0
5.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50 100 200
1.0
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
V
R
, REVERSE VOLTAGE (VOLTS)
-100 -200
Figure 10. Capacitance – NPN 2N6515, 2N6517
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100
Figure 11. Capacitance – PNP 2N6520
NPN 2N6515 2N6517 PNP 2N6520
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70 100
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
T
J
= 25°C
t, TIME (ns)
1.0 k
700
500
300
200
100
70
50
30
20
10
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
I
C
, COLLECTOR CURRENT (mA)
-50 -70 -100
t
r
V
CE(off)
= -100 V
I
C
/I
B
= 5.0
T
J
= 25°C
t
d
@ V
BE(off)
= 2.0 V
t
d
@ V
BE(off)
= 2.0 V
t
r
Figure 12. Turn–On Time – NPN 2N6515, 2N6517
Figure 13. Turn–On Time – PNP 2N6520
10 k
7.0 k
5.0 k
3.0 k
t, TIME (ns)
2.0 k
1.0 k
700
500
300
200
100
1.0
t
f
2.0 k
t
s
1.0 k
700
500
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
I
B1
= I
B2
T
J
= 25°C
300
200
100
70
50
30
2.0 3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70 100
20
-1.0
t
s
t
f
V
CE(off)
= -100 V
I
C
/I
B
= 5.0
I
B1
= I
B2
T
J
= 25°C
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
I
C
, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 14. Turn–Off Time – NPN 2N6515, 2N6517
Figure 15. Turn–Off Time – PNP 2N6520
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