2N2195 datasheet, PDF - EEWORLD Datasheet

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2N2195: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size82KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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2N2195 Overview

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

2N2195 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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	2N2195	2N2539	2N2243A	2N2243	2N696	MA8002
Description	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	1 A	0.8 A	1 A	1 A	0.5 A	0.5 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	50	40	40	20	40
JEDEC-95 code	TO-39	TO-18	TO-39	TO-39	TO-5	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	100 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.6 W	0.5 W	0.8 W	0.3 W	0.6 W	0.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	250 MHz	50 MHz	50 MHz	40 MHz	100 MHz
Parts packaging code	TO-39	BCY	TO-39	TO-39	TO-5	-
Contacts	3	3	3	3	3	-
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99
Collector-emitter maximum voltage	25 V	-	80 V	80 V	-	80 V
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	-	SWITCHING
Base Number Matches	1	1	1	1	1	-

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