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UGB8HT

Description
8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size29KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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UGB8HT Overview

8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB

ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
UGB8HT AND UGB8JT
ULTRAFAST SOFT RECOVERY RECTIFIER
Reverse Voltage - 500 to 600 Volts Forward Current - 8.0 Amperes
TO-263AB
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for freewheeling diode power factor
correction applications
Soft recovery characteristics
Excellent high temperature switching
Planar technology
Optimized to reduce switching losses
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UGB8HT
UGB8JT
UNITS
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at I
F
= 8A
(NOTE 1)
Maximum reverse leakage current
at working peak reverse voltage
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Reverse recovery time at
I
F
=1.0A, di/dt=50A/µs, V
R
=30V, I
rr
=0.1 I
RM
Maximum
Typical
T
J
=25°C
T
J
=125°C
T
C
=25°C
T
C
=100°C
T
C
=125°C
V
RRM
V
RWM
V
RMS
V
DC
I
(AV)
I
FSM
500
400
350
500
8.0
100.0
1.75
1.50
30.0
800.0
4.0
25
50
35
1.0
5.5
10.0
500
250
2.2
600
480
420
600
Volts
Volts
Volts
Volts
Amps
Amps
V
F
I
R
t
rr
t
rr
S
I
RM
I
RM
t
fr
R
ΘJC
T
J
, T
STG
Volts
µA
µA
mA
ns
ns
-
Amps
Amps
ns
°C/W
°C
Typical softness factor (t
b
/t
a
) I
F
=8.0A, di/dt=240A/µs, V
R
=400V I
rr
=0.1 I
RM
Maximum reverse recovery current at
I
F
=8.0A, di/dt=64A/µs,V
R
=400V
T
C
=125°C
Typical reverse recovery current at
I
F
=8.0A, di/dt=240A/µs, V
R
=400V
Peak forward recovery time at
I
F
=8A, di/dt=64A/µs measured at 1.1 V
F
Typical thermal resistance from junction to case
Operating junction and storage temperature range
NOTE: (1) Pulse test: 300µs pulse width, 1% duty cycle
NOTICE: Advanced product information is subject to change without notice
T
C
=125°C
Maximum
Typical
-55 to+150
4/98

UGB8HT Related Products

UGB8HT UGB8JT
Description 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB

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