Small Signal Bipolar Transistor, 0.2A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-52, TO-52, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-52 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 35 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-52 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.36 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 350 MHz |
| Base Number Matches | 1 |
| 2N3829 | 2N2907 | 2N2905 | 2N2906 | 2N2904 | |
|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.2A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-52, TO-52, 3 PIN | RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 PIN | RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-39, TO-39, 3 PIN | RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-18, TO-18, 3 PIN | RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-39, TO-39, 3 PIN |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Parts packaging code | TO-52 | BCY | TO-39 | BCY | TO-39 |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | TO-18, 3 PIN | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compli | compliant | compliant | compliant | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.2 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
| Collector-emitter maximum voltage | 35 V | 40 V | 40 V | 40 V | 40 V |
| Configuration | SINGLE | Single | Single | Single | Single |
| Minimum DC current gain (hFE) | 30 | 30 | 30 | 40 | 20 |
| JEDEC-95 code | TO-52 | TO-18 | TO-39 | TO-18 | TO-39 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.36 W | 0.4 W | 0.6 W | 0.4 W | 0.6 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 350 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
| Maker | - | SSDI | SSDI | SSDI | SSDI |
| Collector-based maximum capacity | - | 8 pF | 8 pF | 8 pF | 8 pF |
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