IMS1605P-20S datasheet, PDF - EEWORLD Datasheet

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IMS1605P-20S: DescriptionIC,SRAM,64KX1,CMOS,DIP,22PIN,PLASTIC; Categorystorage storage; File Size363KB，12 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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IMS1605P-20S Overview

IC,SRAM,64KX1,CMOS,DIP,22PIN,PLASTIC

IMS1605P-20S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Objectid	1167350327
package instruction	DIP, DIP22,.3
Reach Compliance Code	not_compliant
compound_id	13769412
Maximum access time	20 ns
I/O type	SEPARATE
JESD-30 code	R-PDIP-T22
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	22
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Minimum standby current	4.5 V
Maximum slew rate	0.1 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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IMS1605P-20S Related Products

	IMS1605P-20S	IMS1605P-15S	IMS1605E-25S	IMS1605E-15S	IMS1605P-25S
Description	IC,SRAM,64KX1,CMOS,DIP,22PIN,PLASTIC	IC,SRAM,64KX1,CMOS,DIP,22PIN,PLASTIC	IC,SRAM,64KX1,CMOS,SOJ,24PIN,PLASTIC	IC,SRAM,64KX1,CMOS,SOJ,24PIN,PLASTIC	IC,SRAM,64KX1,CMOS,DIP,22PIN,PLASTIC
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
Maximum access time	20 ns	15 ns	25 ns	15 ns	25 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDIP-T22	R-PDIP-T22	R-PDSO-J24	R-PDSO-J24	R-PDIP-T22
JESD-609 code	e0	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1
Number of terminals	22	22	24	24	22
word count	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	64KX1	64KX1	64KX1	64KX1	64KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOJ	SOJ	DIP
Encapsulate equivalent code	DIP22,.3	DIP22,.3	SOJ24,.34	SOJ24,.34	DIP22,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	STMicroelectronics	-	STMicroelectronics	-	STMicroelectronics
package instruction	DIP, DIP22,.3	DIP, DIP22,.3	-	-	DIP, DIP22,.3
Base Number Matches	-	1	1	1	-

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