IRHM2C50SED datasheet, PDF - EEWORLD Datasheet

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IRHM2C50SED: DescriptionPower Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size99KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHM2C50SED Overview

Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRHM2C50SED Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	10.4 A
Maximum drain-source on-resistance	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	41.6 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 91252A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

IRHM2C50SE

IRHM7C50SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

600Volt, 0.6Ω, (SEE) RAD HARD HEXFET

Ω

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate immunity to SEE failure. Ad-

ditionally, under

identical

pre- and post-irrradiation

test conditions, International Rectifier’s RAD HARD

HEXFETs retain

identical

electrical specifications up

to 1 x 10

Rads (Si) total dose. No compensation in

gate drive circuitry is required. These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10

Rads (Si)/Sec, and return to normal op-

eration within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Product Summary

Part Number

IRHM2C50SE

IRHM7C50SE

DSS

600V

DS(on)

0.60Ω

10.4A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

10.4

6.5

41.6

151

1.2

±20

500

10.4

15.1

4.0

-55 to 150

Pre-Irradiation

IRHM2C50SE, IRHM7C50SE Units

W/°C

V/ns

300 (0.063 in. (1.6mm) from

case for 10 sec.)

9.3 (typical)

www.irf.com

1/6/99

IRHM2C50SED Related Products

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Description	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 10A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it lead-free?	Contains lead	Lead free	Contains lead	Lead free	Contains lead	Lead free	Lead free
Is it Rohs certified?	incompatible	conform to	incompatible	conform to	incompatible	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V	600 V	600 V	600 V	600 V
Maximum drain current (ID)	10.4 A	10.4 A	10.4 A	10 A	10.4 A	10.4 A	10.4 A
Maximum drain-source on-resistance	0.65 Ω	0.65 Ω	0.65 Ω	0.6 Ω	0.65 Ω	0.65 Ω	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	260	NOT SPECIFIED	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	NOT SPECIFIED	40	NOT SPECIFIED	40	40
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Other features	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	-	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED	HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	500 mJ	500 mJ	500 mJ	-	500 mJ	500 mJ	500 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Maximum pulsed drain current (IDM)	41.6 A	41.6 A	41.6 A	-	41.6 A	41.6 A	41.6 A
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING

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