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MA7018AP0000000

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size343KB,9 Pages
ManufacturerTXC Corporation
Websitehttp://www.txccrystal.com/
Environmental Compliance
Download Datasheet Parametric View All

MA7018AP0000000 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

MA7018AP0000000 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTXC Corporation
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)80 A
Maximum drain current (ID)80 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Number of components1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)149 W
surface mountNO
TXC CORPORATION
4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan
TEL : 886-2-28941202 , 886-2-2895-2201
FAX : 886-2-28941206 , 886-2-2895-6207
www.txccorp.com
SPECIFICATION FOR APPROVAL
Customer
Product Type
TXC PN
Version
Customer PN
:
: MOSFET
: MA7018AP0000000
: A1
:
TXC Sales / Rep.
Date of Issue
: Rich Cheng
: 2011-12-14
Customer Signature :
(1) TXC requires on copy returned with signature and title of authorized individual that signifies acceptance of the
attached specifications.
(2) Orders received and accepted by TXC after return of signed copy of specification witll be produced per these
specifications
(3) Any changes to these specification must be agreed upon by both parties and new version of the Product Specification
Sheet will be issued.
(4) Any issuance of purchase order prior to consigning back the Approval page of “Specification Sheets” from customers
will be regarded as the agreements o the contents of these specifications.
RoHS Compliant
FMT-DOC024
Issue Date : 12.15’08 Ver.E
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