ZUMT850B datasheet, PDF - EEWORLD Datasheet

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ZUMT850B: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZUMT850B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN

ZUMT850B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
Objectid	1484988218
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	11007649
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

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SOT323 NPN SILICON PLANAR

GENERAL PURPOSE TRANSISTOR

ISSUE 1 - DECEMBER 1998

Partmarking Detail:

ZUMT850B

ZUMT850C

- T1B

- T21

ZUMT850B

ZUMT850C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage

Temperature Range

SYMBOL

V

CBO

V

CES

V

CEO

V

EBO

I

C

I

EM

I

BM

P

tot

T

j

:T

stg

VALUE

50

45

5

100

200

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

15

5

90

200

300

Base-Emitter

Saturation Voltage

Base-Emitter Voltage

V

BE(sat)

V

BE

580

700

900

660

700

770

250

600

UNIT

nA

µA

mV

CONDITIONS.

V

CB

= 30V

V

CB

= 30V, T

amb

=150°C

I

C

= 10mA, I

B

=0.5mA

I

C

=100mA, I

B

=5mA

I

C

=10mA*

I

C

=10mA ,I

B

=0.5mA

I

C

=100mA,I

B

=5mA

I

C

=2mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

Collector Cut-Off Current I

CBO

Collector-Emitter

Saturation Voltage

V

CE(sat)

* Collector-Emitter Saturation Voltage at I

C

= 10mA for the characteristics going through the

operating point I

C

= 11mA, V

CE

= 1V at constant base current.

ZUMT850B Related Products

	ZUMT850B	ZUMT850C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	420
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz

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