Notice
1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low phase distortion, low voltage operation
• Ideal for OSC applications
• Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
2SC5800
2SC5800-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9.0
5.5
1.5
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15660EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001
XuanTie RISC-V Activity Zone
京公网安备 11010802033920号
EEWORLD
