2SA1576UB
Transistors
General purpose small signal amplifier
(−50V,
−0.15A)
2SA1576UB
Applications
General purpose small signal amplifier
Dimensions
(Unit : mm)
UMT3F
2.0
2.1
1.25 0.425
Features
1) Excellent h
FE
linearity.
2) Complements the 2SA1576A.
0.32
(3)
0.9
0.425
Structure
PNP silicon epitaxial planar transistor
(1) Base
(2) Emitter
(3) Collector
(1)
(2)
0.13
0.65 0.65
1.3
Each lead has same dimensions
Abbreviated symbol :
F
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=1ms Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
∗1
∗2
Limits
−60
−50
−6
−150
−200
200
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
−50
−60
−6
−
−
−
82
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−100
−100
−0.5
560
−
5.0
Unit
V
V
V
nA
nA
V
−
MHz
pF
I
C
=
−1mA
I
C
=
−50µA
I
E
=
−50µA
V
CB
=
−60V
V
EB
=
−6V
I
C
/I
B
=
−50mA/−5mA
V
CE
=
−6V,
I
C
=
−1mA
V
CE
=
−12V,
I
E
=
2mA, f
=
100MHz
V
CB
=
−12V,
I
E
=
0A, f
=
1MHz
Conditions
Collector-emitter breakdown voltage BV
CEO
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
0.53
0.53
1/2
2SA1576UB
Transistors
h
FE
rank categories
Rank
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
S
270 to 560
Electrical characteristic curves
−50
COLLECTOR CURRENT : Ic (
mA)
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR CURRENT : I
C
(
mA)
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
V
CE
=
−6V
−10
−35.0
Ta=25˚C
−31.5
−28.0
−24.5
−100
Ta=25˚C
−500
−450
−400
−350
−300
−8
−80
−6
−21.0
−17.5
−60
−250
−200
−4
−14.0
−10.5
−40
−150
−100
−2
−7.0
−3.5µA
−20
−50µA
I
B
=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(
V)
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
0
−1
−2
−3
−4
−5
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
−1
Ta=25˚C
V
CE
=
−5V
−3V
−1V
DC CURRENT GAIN : h
FE
200
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
500
500
Ta=100˚C
25˚C
−40˚C
Ta=25˚C
DC CURRENT GAIN : h
FE
−0.5
200
100
−0.2
I
C
/I
B
=50
−0.1
20
10
100
50
50
V
CE
=
−6V
−5 −10 −20 −50 −100
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
l
C
/l
B
=10
−0.5
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
=
−
12V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
−1
1000
20
Cib
10
500
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Co
b
−0.2
Ta=100˚C
25˚C
−40˚C
200
5
−0.1
100
2
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
50
0.5
1
2
5
10
20
50
100
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT : I
E
(
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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