2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
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COLLECTOR
3
Symbol
2N4123
2N4124
2N4123
2N4124
V
CEO
Value
30
25
40
30
5.0
200
625
5.0
1.5
12
−55
to +150
Unit
Vdc
2
BASE
1
EMITTER
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
V
CBO
Vdc
Emitter−Base Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
12
1
2
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2N
412x
AYWW
G
G
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N4123RLRM
2N4124G
Package
TO−92
TO−92
(Pb−Free)
Shipping
†
2000 / Tape & Ammo
5000 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N4123/D
November, 2008
−
Rev. 4
1
2N4123, 2N4124
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
E
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 2.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base−Emitter Saturation Voltage (Note 1)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Collector−Base Capacitance
(I
E
= 0, V
CB
= 5.0 V, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc, R
S
= 10 k
W,
f = 1.0 kHz)
Current Gain
−
High Frequency
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
= 2.0 mAdc, V
CE
= 10 V, f = 1.0 kHz)
(I
C
= 2.0 mAdc, V
CE
= 10 V, f = 1.0 kHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 k
W,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
2N4123
2N4124
2N4123
2N4124
2N4123
2N4124
2N4123
2N4124
NF
2N4123
2N4124
f
T
250
300
−
−
50
120
2.5
3.0
50
120
−
−
−
−
8.0
4.0
200
480
−
−
200
480
6.0
5.0
dB
MHz
2N4123
2N4124
2N4123
2N4124
V
CE(sat)
V
BE(sat)
h
FE
50
120
25
60
−
−
150
360
−
−
0.3
0.95
Vdc
Vdc
−
2N4123
2N4124
2N4123
2N4124
V
(BR)CEO
30
25
40
30
5.0
−
−
−
−
−
−
−
50
50
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
I
CBO
I
EBO
Vdc
nAdc
nAdc
C
ibo
C
cb
h
fe
pF
pF
−
|h
fe
|
−
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2
2N4123, 2N4124
10
7.0
CAPACITANCE (pF)
5.0
C
ibo
3.0
2.0
C
obo
10.0
7.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
20 30 40
5.0
1.0
V
CC
= 3 V
I
C
/I
B
= 10
V
EB(off)
= 0.5 V
2.0 3.0
5.0 7.0 10
20 30 50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
TIME (ns)
200
100
70
50
30
20
t
f
t
r
t
d
t
s
Figure 1. Capacitance
Figure 2. Switching Times
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(V
CE
= 5 Vdc, T
A
= 25°C)
Bandwidth = 1.0 Hz
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1
2
4
10
f, FREQUENCY (kHz)
20
40
100
SOURCE RESISTANCE = 200
W
I
C
= 1 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1 kW
I
C
= 50
mA
14
f = 1 kHz
12
10
8
6
4
2
0
0.1
I
C
= 100
mA
I
C
= 1 mA
I
C
= 0.5 mA
I
C
= 50
mA
0.2
0.4
1.0 2.0
4.0
10
20
R
S
, SOURCE RESISTANCE (kW)
40
100
Figure 3. Frequency Variations
Figure 4. Source Resistance
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3
2N4123, 2N4124
h PARAMETERS
(V
CE
= 10 V, f = 1 kHz, T
A
= 25°C)
300
hoe , OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
20
10
5
hfe , CURRENT GAIN
200
100
70
50
2
1
30
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 5. Current Gain
20
10
hie , INPUT IMPEDANCE (k
Ω
)
5.0
2.0
1.0
0.5
10
7.0
5.0
3.0
2.0
Figure 6. Output Admittance
h re , VOLTAGE FEEDBACK RATIO (X 10
-4
)
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
1.0
0.7
0.5
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
STATIC CHARACTERISTICS
2.0
h FE , DC CURRENT GAIN (NORMALIZED)
T
J
= +125°C
1.0
0.7
0.5
0.3
0.2
- 55°C
+25°C
V
CE
= 1 V
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 9. DC Current Gain
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4
2N4123, 2N4124
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1 mA
0.6
10 mA
30 mA
100 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
I
B
, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
T
J
= 25°C
1.0
V, VOLTAGE (VOLTS)
0.8
V
BE
@ V
CE
= 1 V
0.6
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
V
BE(sat)
@ I
C
/I
B
= 10
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.2
1.0
0.5
q
VC
for V
CE(sat)
0
- 0.5
- 1.0
- 1.5
- 2.0
q
VB
for V
BE(sat)
- 55°C to +25°C
+25°C to +125°C
- 55°C to +25°C
+25°C to +125°C
0
20
40
60
80
100
120
140
160
180 200
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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