ALM-12224
2.30 GHz – 2.40 GHz
50 Watt High Power SPDT Switch with LNA Module
Data Sheet
Description
Avago Technologies’ ALM-12224 is a multi-chip integrated
module that comprise of a 50 Watt CW high power SPDT
switch, 1
st
stage low noise amplifier and 2
nd
stage high
gain driver amplifier through the use of Avago Tech-
nologies’ proprietary 0.25um GaAs Enhancement-mode
pHEMT process and low distortion silicon PIN diode
technologies.
The ALM-12224 is housed in a compact 8.0 x 8.0 x 1.2 mm
3
molded-chips-on-board (MCOB) module package with 24
pin configuration pads, offering significant PCB space saving
as compare to conventional discrete design approach.
The device offers high power protection switch (Tx mode
operation) with very low insertion loss. During Rx mode
operation, the receiver chain provides a very low NF and
high gain that makes it an ideal choice for cellular infra-
structure in TD-LTE applications.
Features
Very Low Noise Figure
High Power Switch design
50 dB isolation between LNA1_Out and LNA2_In
Small package size 8.0 x 8.0 x 1.2 mm
3
GaAs E-pHEMT Technology
[1]
Low Distortion Silicon PIN Diode Technology
MSL 2a and Lead-free
Specifications
Typical Performance at 2.40 GHz (Rx mode)
36.8 dB Gain
0.99 dB Noise Figure
38.5 dBm Output IP3
Typical Performance at 2.40 GHz (Tx mode)
Component Image
Package Size :
8.0 x 8.0 x 1.2 mm
3
Vbias Vc 1 Gnd Gnd Gnd
Gnd
Gnd
Tx
Pin 1
Ant
Gnd
Gnd
Gnd
Rx Out
Gnd
LNA2 Gnd
_In
Gnd Gnd Gnd LNA1
_Out
Vc 2
Vg
Vdd1
0.40 dB insertion loss
Applications
High power switch LNA module for TD-LTE base station
front-end RF application.
AVAGO
12224
WWYY
XXXX
Gnd
Gnd
Block Diagram with Simplified Schematic
Vc1 Vbias
Vdd2
C6
C7
C2
C8
Ant
Vc2
PA
Vg
C9
Vdd1
R1
C3
C4
LNA1_Out
LNA2_In
C1
Switch bias
circuitry
Tx
External
50 ohm
termination
C10
TOP VIEW
BOTTOM VIEW
Note:
Package marking provides orientation and identification
“12224” = Device Part Number
“WWYY” = Work week and year of manufacture
“XXXX” = Last 4 digit of lot number
Notes:
1. Enhancement mode technology employs positive Vgs, thereby elimi-
nating the need of negative gate voltage associated with conven-
tional depletion mode devices.
L1
C5
Rx Out
Absolute Maximum Rating
[1]
T
A
= 25° C
Symbol
V
c1,max
I
c1 ,max
V
c2,max
I
c2,max
V
bias
V
dd1,2
Vg
P
in,max
P
in,max
P
in,max
Rx P
diss
Parameter
Device Control Voltage 1
(At Rx mode)
Device Control Current 1
(At Rx mode)
Device Control Voltage 2
(At Tx mode)
Device Control Current 1
(At Tx mode)
Device Bias Voltage
Device Voltage, RF output to ground
Gate Voltage
Ant CW RF Input Power (Tx mode);
5 mins testing
Ant CW RF Input Power (Rx mode)
(Vdd = 5.0 V, Idd1 = 50 mA)
LNA2_In CW RF Input Power
(Vdd = 5.0 V, Idd2 = 120 mA)
Rx mode Total Power Dissipation
[3]
LNA1
Rx mode Total Power Dissipation
[3]
LNA2
Units
V
mA
V
mA
V
V
V
dBm
dBm
dBm
W
W
W
°C
°C
°C
Absolute Max.
30
57
30
57
5.5
5.5
0.7
+47.5
+20
+25
0.3
0.5
11.2
150
-65 to 150
-40 to 85
Rx mode Thermal Resistance
[2]
LNA1: V
dd1
= 5.0 V, I
dd1
= 50 mA
LNA2: V
dd2
= 5.0 V, I
dd2
= 120 mA;
LNA1
jc
= 74.7°C/W
LNA2
jc
= 69.9°C/W
Tx mode Thermal Resistance
[2]
LNA1: V
dd1
= 5.0 V, I
dd1
= 50 mA
LNA2: V
dd2
= 5.0 V, I
dd2
= 120 mA;
jc
= 10.2°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
Measurement Technique.
3. Power dissipation in Rx mode with both LNA1
and LNA2 turned on. Board temperature T
B
is
25° C.
LNA1: Derate at 13.5 mW/°C for T
B
> 113° C.
LNA2: Derate at 14.3 mW/°C for T
B
> 86° C.
4. Switch Turn On Condition:
Tx mode: Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V
Rx mode: Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V
Tx P
diss
T
j
T
STG
T
amb
Tx mode Total Power Dissipation
Junction Temperature
Storage Temperature
Ambient Temperature
Rx/Tx Switch Operating Truth Table
[1]
Mode
Rx (Ant – Rx)
Tx (Ant – Tx)
Vbias (V)
5
5
Vc1 (V)
28
0
Vc2 (V)
0
28
Note:
1. Any state other than described above in the truth table may cause permanent damage to
the device.
2
Electrical Specifications
[1]
Rx Mode
T
A
= 25° C, Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V, Vdd1= 5 V, Vdd2 = 5 V, RF performance at 2.30 GHz, measured on demo board
unless otherwise specified.
Symbol
Ibias
Ic1
Ic2
Idd1
Idd2
Total Current
NF
Gain
OIP3
[2]
OP1dB
Isolation
Rx Out RL
Ant RL
Parameter and Test Condition
Vbias current
Vc1 current
Vc2 current
Vdd1 current
Vdd2 current
Total max current consumption ( Ibias + Idd1 + Idd2 )
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1 dB Gain Compression
Isolation (LNA1_output to LNA2_input)
LNA2 Output Return Loss
Antenna Input Return Loss
Units
mA
mA
mA
mA
mA
mA
dB
dB
dBm
dBm
dB
dB
dB
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
51.3
0.0
-51.0
55.1
122.3
228.7
0.97
37.1
38.8
23.4
54.5
18.7
18.9
Max.
–
–
–
–
–
–
–
–
–
–
–
–
–
Tx Mode
T
A
= 25° C, Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V, RF performance at 2.30 GHz, measured on demo board unless otherwise
specified.
Symbol
Ibias
Ic1
Ic2
Tx Ant IL
Max Input Power
[4]
Ant RL
Parameter and Test Condition
Vbias current
Vc1 current
Vc2 current
Tx Antenna Insertion Loss
50 W CW power (5 mins testing) at Antenna port
Antenna Input Return Loss
Units
mA
mA
mA
dB
dBm
dB
Min.
–
–
–
–
–
–
Typ.
41.0
-51.0
10.0
0.37
–
24.0
Max.
–
–
–
–
47.5
–
Notes:
1. Measurements at 2.30 GHz obtained using demo board described in Figure 12.
2. OIP3 test condition: F
RF1
= 2.30 GHz and F
RF2
= 2.301 GHz with input power of -25 dBm per tone measured at worst side band.
3. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded.
4. Max Input Power was characterized during the product development stage. It is not final tested at production.
3
Electrical Specifications
[1]
Rx Mode
T
A
= 25° C, Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V, Vdd1 = 5 V, Vdd2 = 5 V, RF performance at 2.40 GHz, measured on demo board
unless otherwise specified.
Symbol
Ibias
Ic2
Idd1
Idd2
Total Current
NF
Gain
OIP3
[2]
OP1dB
Isolation
Rx Out RL
Ant RL
Parameter and Test Condition
Vbias current
Vc2 current
Vdd1 current
Vdd2 current
Total max current consumption ( Ibias + Idd1 + Idd2 )
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1 dB Gain Compression
Isolation (LNA1_output to LNA2_input)
LNA2 Output Return Loss
Antenna Input Return Loss
Units
mA
mA
mA
mA
mA
dB
dB
dBm
dBm
dB
dB
dB
Min.
42.0
-60.0
30.0
97.0
–
–
35
36
22
–
–
–
Typ.
51.3
-51.0
55.1
122.3
228.7
0.99
36.8
38.5
22.7
54.2
20.0
16.0
Max.
60.0
-42.0
60.0
130.0
250
1.25
–
–
–
–
–
–
Tx Mode
T
A
= 25° C, Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V, RF performance at 2.40 GHz, measured on demo board unless otherwise
specified.
Symbol
Ibias
Ic1
Ic2
Tx Ant IL
Max Input Power
[4]
Ant RL
Parameter and Test Condition
Vbias current
Vc1 current
Vc2 current
Tx Antenna Insertion Loss
50 W CW power (5 mins testing) at Antenna port
Antenna Input Return Loss
Units
mA
mA
mA
dB
dBm
dB
Min.
32.0
–
–
–
–
–
Typ.
41.0
-51.0
10.0
0.40
–
20.8
Max.
–
–
–
0.60
47.5
–
Notes:
1. Measurements at 2.40 GHz obtained using demo board described in Figure 12.
2. OIP3 test condition: F
RF1
= 2.40 GHz and F
RF2
= 2.401 GHz with input power of -25 dBm per tone measured at worst side band.
3. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded.
4. Max Input Power was characterized during the product development stage. It is not fi nal tested at production.
4
ALM-12224 Rx mode Typical Over-Temperature Performance
-10
-12
-14
-16
-18
-20
-22
-24
2.2
2.3
Frequency (GHz)
Figure 1. Ant Input Return Loss vs Frequency vs Temperature
2.4
25° C
85° C
-40° C
2.5
Output RL (dB)
Ant RL (dB)
-10
-15
-20
-25
-30
-35
-40
2.2
2.3
Frequency (GHz)
Figure 2. LNA2 Output Return Loss vs Frequency vs Temperature
2.4
2.5
25° C
85° C
-40° C
2.00
40
39
Gain (dB)
38
37
36
35
25° C
85° C
-40° C
1.50
NF (dB)
1.00
0.50
25° C
85° C
-40° C
2.2
2.3
Frequency (GHz)
2.4
2.5
0.00
2.2
2.3
Frequency (GHz)
2.4
2.5
Figure 3. NF vs Frequency vs Temperature
Figure 4. Gain vs Frequency vs Temperature
44
42
OIP3 (dBm)
40
38
36
34
32
2.2
2.3
Frequency (GHz)
Figure 5. Output IP3 vs Frequency vs Temperature
2.4
25° C
85° C
-40° C
2.5
5
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