MA2403J10000000
P-Ch 20V Fast Switching MOSFETs
General Description
The MA2403J is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The MA2403J meet the RoHS and Green Product
requirement , with full function reliability approved.
Product Summery
BVDSS
-20V
Applications
RDSON
55mΩ
ID
-4.3A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
Load Switch
SOT89 Pin Configuration
D
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
D
S
Rating
-20
±8
-4.3
-3.5
-17.2
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
85
30
Unit
℃/W
℃/W
Rev A.03 D051111
TXC CORPORATION , All Rights Reserved
.
1
Rev A.01 D032610
MA2403J10000000
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-4.5V , I
D
=-4A
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
V
DD
=-10V , V
GS
=-4.5V ,
R
G
=3.3Ω, I
D
=-4A
V
DS
=-15V , V
GS
=-4.5V , I
D
=-4A
2
Min.
-20
---
---
---
---
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.016
44
56
73
-0.5
3.97
---
---
---
14.2
12.1
1.72
3
4.4
50.6
45
25
938
108
96
Max.
---
---
55
70
85
-1.0
---
-1
-5
±100
---
16.9
2.4
4.2
8.8
91
90
50
1313
151
134
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
nC
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
V
GS
=-2.5V , I
D
=-3A
V
GS
=-1.8V , I
D
=-2A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-16V , V
GS
=0V , T
J
=25℃
V
DS
=-16V , V
GS
=0V , T
J
=55℃
V
GS
=±8V
, V
DS
=0V
V
DS
=-5V , I
D
=-4A
ns
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,4
Pulsed Source Current
2,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-4A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
25.7
6.7
Max.
-4.3
-17.2
-1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
TXC CORPORATION , All Rights Reserved
.
2
Rev A.01 D032610
MA2403J10000000
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
25
100
-I
D
=4A
20
-I
D
Drain Current (A)
V
GS
=-5V
V
GS
=-4.5V
80
15
V
GS
=-3V
V
GS
=-2.5V
10
R
DSON
(mΩ)
60
V
GS
=-1.8V
5
0
0
40
-V
DS
, Drain-to-Source Voltage (V)
1
2
3
1
2
-V
GS
(V)
3
4
5
Fig.1 Typical Output Characteristics
4
Fig.2 On-Resistance vs. G-S Voltage
-I
S
Source Current(A)
3
T
J
=150℃
2
T
J
=25℃
1
0
0
0.2
0.4
0.6
0.8
1
-V
DS
, Drain-to-Source Voltage (V)
Fig.3 Forward Characteristics of Reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
-50
0
50
100
150
1.4
1.4
Normalized V
GS(th)
1
1.0
0.6
0.6
0.2
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
TXC CORPORATION , All Rights Reserved
.
3
Rev A.01 D032610
MA2403J10000000
P-Ch 20V Fast Switching MOSFETs
10000
100.00
Capacitance (pF)
1000
Ciss
10.00
100us
1ms
10ms
100ms
100
Coss
Crss
F=1.0MHz
0.10
-I
D
(A)
1.00
DC
T
A
=25 C
Single Pulse
o
10
1
6
-V
DS
(V)
11
15
20
0.01
0.01
0.1
-V
DS
(V)
1
10
100
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
TXC CORPORATION , All Rights Reserved
.
4
Rev A.01 D032610
MA2403J10000000
SOT-89 Outline
E
E2
A
P-Ch 20V Fast Switching MOSFETs
D
D2
B2
B
e
2.30
D3
C
3.10
1.50
UNIT:mm
LAND PATTERN RECOMMENDATION
1.50
0.65
SYMBOLS
MIN
MILLIMETERS
NOM
--
--
--
--
--
--
--
--
--
--
MAX
1.60
0.55
0.48
0.43
2.60
4.25
1.20
4.60
1.80
1.70
MIN
0.055
0.016
0.014
0.014
0.094
0.150
0.031
0.173
0.055
0.051
1.40
0.40
0.35
0.35
2.40
3.80
0.80
4.40
1.40
1.30
INCHES
NOM
--
--
--
--
--
--
--
--
--
--
MAX
0.063
0.022
0.019
0.017
0.102
0.167
0.047
0.181
0.071
0.067
A
B
B2
C
D
D2
D3
E
E2
e
Note:
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS.
2.CONTROLLING DIMENSION IS MILLIMETER CONVERTED INCH DIMENSIONS ARE
NOT NECESSARILY EXACTLY.
TXC CORPORATION , All Rights Reserved
.
5
Rev A.01 D032610
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