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TLP759(D4,F)

Description
NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,DIP
CategoryLED optoelectronic/LED    photoelectric   
File Size147KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

TLP759(D4,F) Overview

NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,DIP

TLP759(D4,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Current transmission ratio - minimum value20%
Maximum forward current0.025 A
Maximum forward voltage1.85 V
Maximum insulation voltage5000 V
Installation featuresTHROUGH HOLE MOUNT
Number of components1
Maximum on-state current0.008 A
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Maximum power dissipation0.1 W
surface mountNO
TLP759
TOSHIBA Photocoupler
GaAℓAs Ired+Photo−IC
TLP759
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Transistor Inverter
The TOSHIBA TLP759 consists of a GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor. This
unit is 8-lead DIP.
TLP759 has no internal base connection, and a faraday shield integrated
on the photodetector chip provides an effective common mode noise
transient immunity.
So this is suitable for application in noisy environmental condition.
Isolation voltage: 5000 Vrms(min.)
Switching speed: t
pHL
= 0.2μs(typ.)
t
pLH
= 0.3μs(typ.) (R
L
=1.9 kΩ)
TTL compatible
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065:2002, certificate no.8869
BS EN60950-1:2002, certificate no.8870
Option (D4) type
VDE Approved: DIN EN 60747-5-2
Certificate No. 40009302
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 6000V
PK
(Note)
When a EN 60747-5-2 approved type is needed,
please designate the “Option (D4)”
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Unit: mm
Pin Configuration
(top view)
1
2
3
4
SHIELD
8
7
6
5
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: Emitter(gnd)
6: Collector(output)
7: N.C.
8: Vcc
Creepage distance: 7.0mm (min)
Clearance: 7.0mm (min)
Insulation thickness: 0.4mm (min)
Schematic
I
CC
I
F
2
V
F
3
6
Shield
5
I
O
V
O
GND
8
V
CC
1
2007-10-01
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