AUTOMOTIVE GRADE
PD - 96400A
AUIRFS3004
AUIRFSL3004
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
D
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
40V
1.4mΩ
1.75mΩ
340A
195A
c
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
G
S
G
G
D
S
D
2
Pak
AUIRFS3004
TO-262
AUIRFSL3004
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
)
is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
E
AS (Thermally limited)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Max.
d
f
Ãd
e
d
340
240
195
1310
380
2.5
± 20
4.4
300
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
kl
Parameter
2
Typ.
Max.
0.40
40
Units
°C/W
Junction-to-Ambient (PCB Mount) , D Pak
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
10/4/11
AUIRFS/SL3004
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
R
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
40
––– –––
––– 0.037 –––
–––
1.4 1.75
2.0
–––
4.0
1170 ––– –––
––– –––
20
––– ––– 250
––– ––– 100
––– ––– -100
–––
2.2
–––
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 195A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 10V, I
D
= 195A
V
DS
= 40V, V
GS
= 0V
μA
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
Ω
g
d
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
40
68
92
23
220
90
130
9200
2020
1340
2440
2690
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 187A
V
DS
=20V
V
GS
= 10V
I
D
= 187A, V
DS
=0V, V
GS
= 10V
V
DD
= 26V
I
D
= 195A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 32V
g
ns
g
h
iÃ
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 340
–––
Conditions
MOSFET symbol
D
A
Ãd
1310
showing the
integral reverse
G
S
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
27
–––
ns
–––
31
–––
–––
18
–––
nC
T
J
= 125°C
–––
41
–––
–––
1.2
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
T
J
= 25°C
V
R
= 34V,
T
J
= 125°C
I
F
= 195A
di/dt = 100A/μs
T
J
= 25°C
g
g
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.016mH,R
G
= 25Ω,
I
AS
= 195A, V
GS
=10V. Part not recommended for use above
this value .
I
SD
≤
195A, di/dt
≤
930A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
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2
AUIRFS/SL3004
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
3L-D2 PAK
3L-TO-262
MSL1
N/A
Class M4(+/- 800V )
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Class H3A(+/- 6000V )
AEC-Q101-001
Class C5(+/- 2000V )
AEC-Q101-005
Yes
†††
†††
†
††
†††
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRFS/SL3004
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
1000
BOTTOM
4.5V
100
4.5V
100
≤
60μs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 25V
≤60μs
PULSE WIDTH
1
2
3
4
5
6
7
8
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 187A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS/SL3004
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
1msec
100
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
2.0
1
10
VDS, Drain-to-Source Voltage (V)
100
VSD, Source-to-Drain Voltage (V)
100
T J = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
350
300
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
50
Id = 5mA
48
Limited By Package
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
1200
1000
800
600
400
200
0
ID
TOP
30A
54A
BOTTOM 195A
Energy (μJ)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10 15 20 25 30 35 40 45
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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