EEWORLDEEWORLDEEWORLD

Part Number

Search

CY7C1513KV18-200BZXC

Description
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Categorystorage    storage   
File Size890KB,32 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric Compare View All

CY7C1513KV18-200BZXC Overview

QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

CY7C1513KV18-200BZXC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)200 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density75497472 bit
Memory IC TypeQDR SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Minimum standby current1.7 V
Maximum slew rate0.44 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width13 mm

CY7C1513KV18-200BZXC Preview

72-Mbit QDR II SRAM 4-Word
Burst Architecture
Features
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
®
Configurations
CY7C1511KV18 – 8M x 8
CY7C1526KV18 – 8M x 9
CY7C1513KV18 – 4M x 18
CY7C1515KV18 – 2M x 36
Separate Independent Read and Write Data Ports
Supports concurrent transactions
333 MHz Clock for High Bandwidth
4-word Burst for Reducing Address Bus Frequency
Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 666 MHz) at 333 MHz
Two Input Clocks (K and K) for Precise DDR Timing
SRAM uses rising edges only
Two Input Clocks for Output Data (C and C) to minimize Clock
Skew and Flight Time Mismatches
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Single Multiplexed Address Input Bus Latches Address Inputs
for Read and Write Ports
Separate Port Selects for Depth Expansion
Synchronous Internally Self-timed Writes
QDR
®
II operates with 1.5 Cycle Read Latency when DOFF is
asserted HIGH
Operates similar to QDR I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
Available in x8, x9, x18, and x36 Configurations
Full Data Coherency, providing Most Current Data
Core V
DD
= 1.8V (±0.1V); I/O V
DDQ
= 1.4V to V
DD
Supports both 1.5V and 1.8V I/O supply
Available in 165-Ball FBGA Package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free Packages
Variable Drive HSTL Output Buffers
JTAG 1149.1 Compatible Test Access Port
Phase Locked Loop (PLL) for Accurate Data Placement
Functional Description
The CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, and
CY7C1515KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR II architecture. QDR II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turnaround” the data bus that exists with common
I/O devices. Each port can be accessed through a common
address bus. Addresses for read and write addresses are
latched on alternate rising edges of the input (K) clock. Accesses
to the QDR II read and write ports are independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with four 8-bit words (CY7C1511KV18), 9-bit words
(CY7C1526KV18), 18-bit words (CY7C1513KV18), or 36-bit
words (CY7C1515KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus ‘turnarounds’.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Table 1. Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
x8
x9
x18
x36
333 MHz
333
600
600
620
850
300 MHz
300
560
560
570
790
250 MHz
250
490
490
500
680
200 MHz
200
430
430
440
580
167 MHz
167
380
380
390
510
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-00435 Rev. *K
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 6, 2010
[+] Feedback
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
Logic Block Diagram (CY7C1511KV18)
D
[7:0]
8
Read Add. Decode
Write Add. Decode
A
(20:0)
21
Write
Reg
Address
Register
Write
Reg
Write
Reg
Write
Reg
Address
Register
21
A
(20:0)
2M x 8 Array
2M x 8 Array
2M x 8 Array
2M x 8 Array
K
K
CLK
Gen.
Control
Logic
RPS
C
C
CQ
DOFF
Read Data Reg.
32
V
REF
WPS
NWS
[1:0]
16
Control
Logic
16
Reg.
Reg.
Reg. 8
8
8
8
CQ
8
Q
[7:0]
Logic Block Diagram (CY7C1526KV18)
D
[8:0]
9
Read Add. Decode
Write Add. Decode
A
(20:0)
21
Write
Reg
Address
Register
Write
Reg
Write
Reg
Write
Reg
Address
Register
21
A
(20:0)
2M x 9 Array
2M x 9 Array
2M x 9 Array
2M x 9 Array
K
K
CLK
Gen.
Control
Logic
RPS
C
C
CQ
DOFF
Read Data Reg.
36
V
REF
WPS
BWS
[0]
18
Control
Logic
18
Reg.
Reg.
Reg. 9
9
9
9
CQ
9
Q
[8:0]
Document Number: 001-00435 Rev. *K
Page 2 of 32
[+] Feedback
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
Logic Block Diagram (CY7C1513KV18)
D
[17:0]
18
Read Add. Decode
Write Add. Decode
A
(19:0)
20
Write
Reg
Address
Register
Write
Reg
Write
Reg
Write
Reg
Address
Register
20
A
(19:0)
1M x 18 Array
1M x 18 Array
1M x 18 Array
1M x 18 Array
K
K
CLK
Gen.
Control
Logic
RPS
C
C
CQ
DOFF
Read Data Reg.
72
V
REF
WPS
BWS
[1:0]
36
Control
Logic
36
Reg.
Reg.
Reg. 18
18
18
18
CQ
18
Q
[17:0]
Logic Block Diagram (CY7C1515KV18)
D
[35:0]
36
Read Add. Decode
Write Add. Decode
A
(18:0)
19
Write
Reg
Address
Register
Write
Reg
Write
Reg
Write
Reg
Address
Register
19
A
(18:0)
512K x 36 Array
512K x 36 Array
512K x 36 Array
512K x 36 Array
K
K
CLK
Gen.
Control
Logic
RPS
C
C
CQ
DOFF
Read Data Reg.
144
V
REF
WPS
BWS
[3:0]
72
Control
Logic
72
Reg.
Reg.
Reg. 36
36
36
36
CQ
36
Q
[35:0]
Document Number: 001-00435 Rev. *K
Page 3 of 32
[+] Feedback
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
Contents
Features .............................................................................. 1
Configurations .................................................................... 1
Functional Description ....................................................... 1
Contents .............................................................................. 2
Logic Block Diagram (CY7C1511KV18) ............................ 3
Logic Block Diagram (CY7C1526KV18) ............................ 3
Logic Block Diagram (CY7C1513KV18) ............................ 4
Logic Block Diagram (CY7C1515KV18) ............................ 4
Pin Configuration ............................................................... 5
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout .................... 5
Pin Definitions .................................................................... 7
Functional Overview .......................................................... 9
Read Operations ........................................................... 9
Write Operations ........................................................... 9
Byte Write Operations ................................................... 9
Single Clock Mode ...................................................... 10
Concurrent Transactions ............................................. 10
Depth Expansion ......................................................... 10
Programmable Impedance .......................................... 10
Echo Clocks ................................................................ 10
PLL .............................................................................. 10
Application Example ........................................................ 11
Truth Table ........................................................................ 11
Write Cycle Descriptions ................................................. 12
Write Cycle Descriptions ................................................. 12
Write Cycle Descriptions ................................................. 13
IEEE 1149.1 Serial Boundary Scan (JTAG) .................... 14
Disabling the JTAG Feature ........................................ 14
Test Access Port—Test Clock ..................................... 14
Test Mode Select (TMS) ............................................. 14
Test Data-In (TDI) ....................................................... 14
Test Data-Out (TDO) ................................................... 14
Performing a TAP Reset ............................................. 14
TAP Registers ............................................................. 14
TAP Instruction Set ..................................................... 14
TAP Controller State Diagram ......................................... 16
TAP Controller Block Diagram ........................................ 17
TAP Electrical Characteristics ........................................ 17
TAP AC Switching Characteristics ................................. 18
TAP Timing and Test Conditions .................................... 18
Identification Register Definitions .................................. 19
Scan Register Sizes ......................................................... 19
Instruction Codes ............................................................. 19
Boundary Scan Order ...................................................... 20
Power Up Sequence in QDR II SRAM ............................. 21
Power Up Sequence ................................................... 21
PLL Constraints ........................................................... 21
Maximum Ratings ............................................................. 22
Operating Range .............................................................. 22
Neutron Soft Error Immunity ........................................... 22
Electrical Characteristics ................................................ 22
DC Electrical Characteristics ....................................... 22
AC Electrical Characteristics ....................................... 24
Capacitance ...................................................................... 25
Thermal Resistance ......................................................... 25
Switching Characteristics ............................................... 26
Switching Waveforms ...................................................... 28
Ordering Information ....................................................... 29
Package Diagram ............................................................. 30
Document History Page ................................................... 31
Sales, Solutions, and Legal Information ........................ 32
Worldwide Sales and Design Support ......................... 32
Products ...................................................................... 32
Document Number: 001-00435 Rev. *K
Page 4 of 32
[+] Feedback
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
Pin Configuration
The pin configurations for CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, and CY7C1515KV18 follow.
[1]
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1511KV18 (8M x 8)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
A
NC
NC
D4
NC
NC
D5
V
REF
NC
NC
Q6
NC
D7
NC
TCK
3
A
NC
NC
NC
Q4
NC
Q5
V
DDQ
NC
NC
D6
NC
NC
Q7
A
4
WPS
A
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
A
A
5
NWS
1
NC/288M
A
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
A
A
A
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
C
C
7
NC/144M
NWS
0
A
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
A
A
A
8
RPS
A
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
A
A
9
A
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
A
10
A
NC
NC
NC
D2
NC
NC
V
REF
Q1
NC
NC
NC
NC
NC
TMS
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
CY7C1526KV18 (8M x 9)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
A
NC
NC
D5
NC
NC
D6
V
REF
NC
NC
Q7
NC
D8
NC
TCK
3
A
NC
NC
NC
Q5
NC
Q6
V
DDQ
NC
NC
D7
NC
NC
Q8
A
4
WPS
A
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
A
A
5
NC
NC/288M
A
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
A
A
A
6
K
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
C
C
7
NC/144M
BWS
0
A
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
A
A
A
8
RPS
A
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
A
A
9
A
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
A
10
A
NC
NC
NC
D3
NC
NC
V
REF
Q2
NC
NC
NC
NC
D0
TMS
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
Note
1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-00435 Rev. *K
Page 5 of 32
[+] Feedback

CY7C1513KV18-200BZXC Related Products

CY7C1513KV18-200BZXC CY7C1515KV18-200BZXC CY7C1513KV18-200BZC
Description QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Is it Rohs certified? conform to conform to incompatible
Maker Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
Parts packaging code BGA BGA BGA
package instruction 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Contacts 165 165 165
Reach Compliance Code compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 0.45 ns 0.45 ns 0.45 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK) 200 MHz 200 MHz 200 MHz
I/O type SEPARATE SEPARATE SEPARATE
JESD-30 code R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
JESD-609 code e1 e1 e0
length 15 mm 15 mm 15 mm
memory density 75497472 bit 75497472 bit 75497472 bit
Memory IC Type QDR SRAM QDR SRAM QDR SRAM
memory width 18 36 18
Number of functions 1 1 1
Number of terminals 165 165 165
word count 4194304 words 2097152 words 4194304 words
character code 4000000 2000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 4MX18 2MX36 4MX18
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA
Encapsulate equivalent code BGA165,11X15,40 BGA165,11X15,40 BGA165,11X15,40
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 240
power supply 1.5/1.8,1.8 V 1.5/1.8,1.8 V 1.5/1.8,1.8 V
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.4 mm 1.4 mm 1.4 mm
Minimum standby current 1.7 V 1.7 V 1.7 V
Maximum slew rate 0.44 mA 0.58 mA 0.44 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30
width 13 mm 13 mm 13 mm
Humidity sensitivity level 3 3 -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 161  716  1588  264  2287  4  15  32  6  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号