H5TQ1G43AFP(R)-xxC
H5TQ1G83AFP(R)-xxC
H5TQ1G63AFP(R)-xxC
1Gb DDR3 SDRAM
H5TQ1G43AFP(R)-xxC
H5TQ1G83AFP(R)-xxC
H5TQ1G63AFP(R)-xxC
** Contents are subject to change at any time without notice.
Rev. 0.4 / January 2009
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
1
H5TQ1G43AFP(R)-xxC
H5TQ1G83AFP(R)-xxC
H5TQ1G63AFP(R)-xxC
Revision History
Revision No.
0.01
0.02
0.1
0.2
0.3
0.4
History
Preliminary Initial Release
IDD Added
Revision 0.1 specification Release
Added Halogen free products
Applied New IDD definition
Notation change of package outline
Draft Date
Nov. 2007
March 2008
April 2008
April 2008
Sep 2008
Jan 2009
Remark
Preliminary
Preliminary
Rev. 0.4 /January 2009
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H5TQ1G43AFP(R)-xxC
H5TQ1G83AFP(R)-xxC
H5TQ1G63AFP(R)-xxC
Table of Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Features
1.1.2 Ordering Information
1.1.3 Operating Frequency
1.2 Package Ballout / Mechanical Dimension
1.2.1 x4 Package Ball out
1.2.2 x8 Package Ball out
1.2.3 x16 Package Ball out
1.3 Row and Column Address Table: 1G/2G/4G/8G
1.4 Pin Functional Description
2. Command Description
2.1 Command Truth Table
2.2 Clock Enable (CKE) Truth Table for Synchronous Transitions
3. Absolute Maximum Ratings
4. Operating Conditions
4.1 Operating Temperature Condition
4.2 DC Operating Conditions
5. AC and DC Input Measurement Levels
5.1 AC and DC Logic Input Levels for Single-Ended Signals
5.2 AC and DC Logic Input Levels for Differential Signals
5.3 Differential Input Cross Point Voltage
5.4 Slew Rate Definitions for Single Ended Input Signals
5.4.1 Input Slew Rate for Input Setup Time (tIS) and Data Setup Time (tDS)
5.4.2 Input Slew Rate for Input Hold Time (tIH) and Data Hold Time (tDH)
5.5 Slew Rate Definitions for Differential Input Signals
Rev. 0.4 /January 2009
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H5TQ1G43AFP(R)-xxC
H5TQ1G83AFP(R)-xxC
H5TQ1G63AFP(R)-xxC
6. AC and DC Output Measurement Levels
6.1 Single Ended AC and DC Output Levels
6.1.1 Differential AC and DC Output Levels
6.2 Single Ended Output Slew Rate
6.3 Differential Output Slew Rate
6.4 Reference Load for AC Timing and Output Slew Rate
7. Overshoot and Undershoot Specifications
7.1 Address and Control Overshoot and Undershoot Specifications
7.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
7.3 34 ohm Output Driver DC Electrical Characteristics
7.4 Output Driver Temperature and Voltage sensitivity
7.5 On-Die Termination (ODT) Levels and I-V Characteristics
7.5.1 On-Die Termination (ODT) Levels and I-V Characteristics
7.5.2 ODT DC Electrical Characteristics
7.5.3 ODT Temperature and Voltage sensitivity
7.6 ODT Timing Definitions
7.6.1 Test Load for ODT Timings
7.6.2 ODT Timing Reference Load
8. IDD Specification Parameters and Test Conditions
8.1 IDD Measurement Conditions
8.2 IDD Specifications
8.2.1 IDD6 Current Definition
8.2.2 IDD6TC Specification (see notes 1~2)
9. Input/Output Capacitance
10. Standard Speed Bins
11. Electrical Characteristics and AC Timing
12. Package Dimensions
Rev. 0.4 /January 2009
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H5TQ1G43AFP(R)-xxC
H5TQ1G83AFP(R)-xxC
H5TQ1G63AFP(R)-xxC
1.
DESCRIPTION
The H5TQ1G43AFP-xxC, H5TQ1G83AFP-xxC and H5TQ1G63AFP-xxC are a 1,073,741,824-bit CMOS Double Data Rate III
(DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and
high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges
of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK),
Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
1.1 Device Features and Ordering Information
1.1.1
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 6, 7, 8, 9, and (10)
supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• 8K refresh cycles /64ms
• JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• Auto Self Refresh supported
• On Die Thermal Sensor supported
• 8 bit pre-fetch
1.1.2
ORDERING INFORMATION
Part No.
H5TQ1G43AFP*(R)-**xxC
H5TQ1G83AFP*(R)-**xxC
H5TQ1G63AFP*(R)-**xxC
Configuration
256M x 4
128M x 8
64M x 16
Package
78ball FBGA
96ball FBGA
1.1.3
OPERATING FREQUENCY
Grade
-S6
-G7
-H9
Frequency [MHz]
CL5
CL6
O
O
O
O
O
O
O
O
O
O
CL7
CL8 CL9 CL10
Remark
(CL-tRCD-tRP)
DDR3-800 6-6-6
DDR3-1066 7-7-7
DDR3-1333 9-9-9
* (R) means Halogen Free Products
** XX means Speed Bin Grade
Rev. 0.4 /January 2009
5
Microchip MCU
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