2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
2N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
G
S
G
S
TO-92
D
SOT-23
Mark: 6B / 6M / 6H
D
NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5484-5486
350
2.8
125
357
Max
*MMBF5484-5486
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= - 1.0
µA,
V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
GS
= - 20 V, V
DS
= 0, T
A
= 100°C
5484
V
DS
= 15 V, I
D
= 10 nA
5485
5486
- 25
- 1.0
- 0.2
- 3.0
- 4.0
- 6.0
V
nA
µA
V
V
V
- 0.3
- 0.5
- 2.0
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, V
GS
= 0
5484
5485
5486
1.0
4.0
8.0
5.0
10
20
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
5484
5485
5486
V
DS
= 15 V, V
GS
= 0, f = 100 MHz
5484
V
DS
= 15 V, V
GS
= 0, f = 400 MHz
5485 / 5486
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
5484
5485
5486
V
DS
= 15 V, V
GS
= 0, f = 100 MHz
5484
V
DS
= 15 V, V
GS
= 0, f = 400 MHz
5485 / 5486
V
DS
= 15 V, V
GS
= 0, f = 100 MHz
5484
V
DS
= 15 V, V
GS
= 0, f = 400 MHz
5485
5486
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, R
G
= 1.0 kΩ,
5484
f = 100 MHz
V
DS
= 15 V, R
G
= 1.0 kΩ,
5484
f = 400 MHz
V
DS
= 15 V , R
G
= 1.0 kΩ,
5485 / 5486
f = 100 MHz
V
DS
= 15 V, R
G
= 1.0 kΩ,
5485 / 5486
f = 400 MHz
3000
3500
4000
6000
7000
8000
100
1000
50
60
75
75
100
2500
3000
3500
5.0
1.0
2.0
3.0
4.0
2.0
4.0
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
µmhos
pF
pF
pF
dB
dB
dB
dB
Re
(
y
is)
Input Conductance
g
os
Output Conductance
Re
(
y
os)
Output Conductance
Re
(
y
fs)
Forward Transconductance
5
C
iss
C
rss
C
oss
NF
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Noise Figure
*
Pulse Test: Pulse Width
≤
300 ms, Duty Cycle
≤
2%
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
Typical Characteristics
Transfer Characteristics
20
Channel Resistance vs Temperature
1000
r
DS
- DRAIN ON RESISTANCE (
Ω
)
500
300
200
100
V
GS(OFF)
= -4.5V
T
A
= -55 C
T
A
= +25 C
O
O
V
DS
= 15V
I
D
- DRAIN CURRENT (mA)
16
V
GS(OFF)
= -1.0V
-2.5 V
-5.0V
-8.0 V
12
T
A
= +125 C
O
T
A
= -55 C
T
A
= +25 C
T
A
= +125
O
C
O
O
8
50
30
20
10
4
V
DS
V
-50
GS
= 100mV
=0V
150
-2.5 V
0
0
-1
-2
-3
-4
V
GS
- GATE-SOURCE VOLTAGE(V)
-5
0
50
100
T
A
- AMBIENT TEMPERATURE (
°
C)
Transconductance
Characteristics
gfs -- TRANSCONDUCTANCE (mmhos)
7
6
5
4
3
2
1
0
0
Common Drain-Source
Characteristics
I
D
-- DRAIN CURRENT (mA)
DS
T
A
= -55 C
T
A
= +25 C
T
A
= +125
O
C
O
O
V
= 15V
5
4
TYP V
3
T
A
= +25 C
GS(OFF)
O
= -5.0V
=
0V
5V
.0V
-0.
-1
V
-1.5
-2.0V
T
A
= -55 C
T
A
= +25 C
T
A
= +125
O
C
V
GS(OFF)
= -4.5V
O
O
V
GS
-2.5V
-3.0V
-3.5V
2
1
-2.5 V
-1
-2
-3
-4
V
GS
- GATE-SOURCE VOLTAGE(V)
-5
-4.0V
0
0
0.2
0.4
0.6
0.8
V
DS
- DRAIN-SOURCE VOLTAGE(V)
1
gos -- OUTPUT CONDUCTANCE (u mhos)
T
A
= +25 C
f = 1.0 kHz
20
10
5
O
V
GS(OFF)
= -5.5V
5.0V
10V
15V
20V
gfs, I
DSS
@ V
DS
= 15 V, V
r
DS
@ V
DS
= 100mV, V
GS
= 0 PULSE
=0
GS
100
50
30
20
10
5
V
DG
= 5v
10
20
15
5
10
15
20
V
GS(OFF)
1
0.5
= -3.5V
V
0.1
0.01 0.02
GS(OFF)
= -1.5V
5
10
20
10
-
1
V
GS(OFF)
@ V
GS
= 15V, I
D
= 1nA
-
2
-
3
-
5
-
7
V - GATE-SOURCE VOLTAGE(V)
GS
3
2
1
-
10
0.05 0.1 0.2
0.5
1
2
I
D
-- DRAIN CURRENT (mA)
gfs --- TRANSCONDUCTANCE ( mmhos )
I
-- DRAIN CURRENT ( mA )
DSS
Output Conductance vs
Drain Current
r
DS
-- DRAIN "ON" RESISTANCE (
Ω
)
Transconductance
Parameter Interactions
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
Typical Characteristics
(continued)
Transconductance vs
Drain Current
gfs -- TRANSCONDUCTANCE (mmhos)
10
e
n
- NOISE VOLTAGE ( nV/
Noise Voltage vs Frequency
V
DG
= 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2 f @ f > 1.0 kHz
Hz )
V
GS(OFF)
= - 1.5V
O
T
A
= -55 C
5
T
A
= +25 C
T
A
= +125
O
C
1
O
T
A
= -55 C
V
GS(OFF)
T
A
= +25 C
T
A
= +125
O
C
= - 5V
V
DG
= 15V
f = 1.0 kHz
O
O
0.5
10
5
I
D
= 0.5 mA
I
D
= 3 mA
0.1
0.01 0.02
0.05 0.1 0.2
0.5
1
2
I
D
- DRAIN CURRENT (mA)
5
10
1
0.01 0.03
0.1
0.3
1
3
10
f -- FREQUENCY (kHz)
30
100
Capacitance vs Voltage
10
) -- CAPACITANCE (pF)
f = 0.1 - 1.0 MHz
NF -- NOISE FIGURE (dB)
5
C
is
( V
DS
= 15 V)
1
C
rs
( V
DS
= 0 V)
4
5
Noise Figure Frequency
V
DS
I
D
= 15V
= 5.0 mA
3
R
g
= 1.0 k
Ω
O
T
A
= +25 C
2
C
is
( C
rs
1
0
-5
-10
-15
V
GS
-- GATE-SOURCE VOLTAGE(V)
-20
0
10
20
30
50
100
200 300
f -- FREQUENCY (MHz)
500
1000
5
Power Dissipation vs.
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (ºC)
125
150
TO-92
SOT-23
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
Common Source Characteristics
Input Admittance
Y
iss
-- INPUT ADMITTANCE (mmhos)
10
5
V
DS
= 15V
V
GS
= 0
(CS)
-- OUTPUT CONDUCTANCE (mmhos)
1
Output Admittance
b
OSS
(x 10)
g
OSS
1
b
iss
g
iss
V
DS
= 15V
V
GS
= 0
(CS)
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
Forward Transadmittance
Y
fss
-- FORWARD TRANSFER (mmhos)
Y
rss
-- REVERSE TRANSFER (mmhos)
Y
OSS
Reverse Transadmittance
10
5
10
5
+g
fss
-b
fss
1
- b
rss
1
-g
V
DS
= 15V
V
GS
= 0
(CS)
100
rss
( X 0.1)
V
DS
= 15V
V
GS
= 0
(CS)
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
200
300
500
f -- FREQUENCY (MHz)
700
1000
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