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AP13P15GH-HF

Description
Lower On-resistance, Simple Drive Requirement
CategoryDiscrete semiconductor    The transistor   
File Size98KB,4 Pages
ManufacturerAPEC
Download Datasheet Parametric Compare View All

AP13P15GH-HF Overview

Lower On-resistance, Simple Drive Requirement

AP13P15GH-HF Parametric

Parameter NameAttribute value
MakerAPEC
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
AP13P15GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-150V
300mΩ
-13A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as high efficiency switching DC/DC converters and DC motor
control. The through-hole version (AP13P15GJ) is available for low-
profile applications.
G
G
D S
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
3
Rating
-150
+20
-13
-8.2
-52
96
0.77
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
W
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.3
62.5
110
Units
℃/W
℃/W
℃/W
1
201006242
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice

AP13P15GH-HF Related Products

AP13P15GH-HF AP13P15GJ-HF
Description Lower On-resistance, Simple Drive Requirement Lower On-resistance, Simple Drive Requirement
Maker APEC APEC
Parts packaging code TO-252 TO-251
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 4 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V 150 V
Maximum drain current (ID) 13 A 13 A
Maximum drain-source on-resistance 0.3 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-251
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 52 A 52 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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