AP13P15GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-150V
300mΩ
-13A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as high efficiency switching DC/DC converters and DC motor
control. The through-hole version (AP13P15GJ) is available for low-
profile applications.
G
G
D S
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
3
Rating
-150
+20
-13
-8.2
-52
96
0.77
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.3
62.5
110
Units
℃/W
℃/W
℃/W
1
201006242
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP13P15GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-7A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-150V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=-7A
V
DS
=-120V
V
GS
=-10V
V
DS
=-75V
I
D
=-7A
R
G
=10Ω,V
GS
=-10V
R
D
=10.7Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-150
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
6
-
-
38
5
15
11
21
60
36
220
60
3.5
Max. Units
-
300
-3
-
-25
+100
60
-
-
-
-
-
-
-
-
5
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1210 1940
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=-7A, V
GS
=0V
I
S
=-7A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
110
620
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Maximum Junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP13P15GH/J-HF
25
25
T
C
=25
o
C
20
-10V
-7.0V
20
T
C
= 150
o
C
-I
D
, Drain Current (A)
-10V
-7.0V
-I
D
, Drain Current (A)
15
15
-5.0V
10
-5.0V
10
-4.5V
5
-4.5V
5
V
G
= - 3 .0V
0
V
G
= - 3 .0V
0
25
0
5
10
15
20
25
0
5
10
15
20
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1400
2.3
I
D
= -7 A
T
C
=25
℃
1000
I
D
=- 7 A
V
G
=-10V
1.8
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.3
600
0.8
200
2
4
6
8
10
0.3
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
6
4
Normalized -V
GS(th)
(V)
1.2
1.1
-I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
2
0.7
0
0
0.2
0.4
0.6
0.8
1
0.3
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP13P15GH/J-HF
12
10000
f=1.0MHz
10
-V
GS
, Gate to Source Voltage (V)
8
I
D
= -7A
V
DS
= -120V
C (pF)
1000
C
iss
6
C
oss
4
100
C
rss
2
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
10
0.2
-I
D
(A)
1ms
0.1
0.1
0.05
1
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.1
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
V
G
V
DS
=-5V
6
-I
D
, Drain Current (A)
Q
G
T
j
=25
o
C
T
j
=150
o
C
-10V
Q
GS
Q
GD
4
2
Charge
0
0
2
4
6
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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