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ZVN0120AM1

Description
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size31KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

ZVN0120AM1 Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3

ZVN0120AM1 Parametric

Parameter NameAttribute value
MakerZetex Semiconductors
Objectid1407999075
package instructionSMALL OUTLINE, R-PSSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
compound_id10915963
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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