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2SK374S

Description
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size32KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SK374S Overview

Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN

2SK374S Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (ID)0.03 A
FET technologyJUNCTION
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Silicon Junction FETs (Small Signal)
2SK374
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
0.65±0.15
+0.2
unit: mm
0.65±0.15
2.8
–0.3
1.5
–0.05
+0.25
s
Features
q
Low noise-figure (NF)
q
High gate to drain voltage V
GDO
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.95
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
0.4
–0.05
+0.1
2
1.45
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
55
−55
−55
30
10
200
150
−55
to +150
V
V
V
mA
mA
mW
°C
°C
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 2B
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GDC
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
−30V,
V
DS
= 0
I
G
=
−100µA,
V
DS
= 0
V
DS
= 10V, I
D
= 10µA
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100kΩ
f = 100Hz
2.5
7.5
6.5
1.9
2.5
−55
−80
−5
min
1
typ
max
20
−10
Unit
mA
nA
V
V
mS
pF
pF
dB
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NF
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
Marking Symbol
0 to 0.1
Parameter
Symbol
Ratings
Unit
0.1 to 0.3
0.4±0.2
0.8
s
Absolute Maximum Ratings
(Ta = 25°C)
1.1
–0.1
0.16
–0.06
+0.2
+0.1
1

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2SK374S 2SK374P 2SK374R 2SK374Q
Description Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.03 A 0.03 A 0.03 A 0.03 A
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
JEDEC-95 code TO-236 TO-236 TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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